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公开(公告)号：US09676047B2
公开(公告)日：2017-06-13
申请号：US14569402
申请日：2014-12-12
发明人： Yung Ho Ryu , Seung Woo Choi , Tae Hun Kim , Gyeong Seon Park , Jong Hoon Lim , Sung Joon Kim , Myong Soo Cho
IPC分类号： H01L33/62 , B23K1/20 , B23K1/00 , B23K35/26 , B23K35/28 , B23K35/30 , B23K35/32 , B23K35/02 , H01L23/00 , H01L33/00 , B23K20/02 , B23K20/16 , B23K20/233 , B23K101/40 , B23K101/42
CPC分类号： B23K1/0016 , B23K1/20 , B23K20/026 , B23K20/16 , B23K20/233 , B23K35/0238 , B23K35/0261 , B23K35/0272 , B23K35/262 , B23K35/264 , B23K35/268 , B23K35/282 , B23K35/3013 , B23K35/302 , B23K35/3033 , B23K35/3046 , B23K35/32 , B23K35/322 , B23K2101/40 , B23K2101/42 , H01L24/29 , H01L24/83 , H01L33/0079 , H01L2224/83193 , H01L2924/01322 , H01L2924/12042 , H01L2933/0066 , H01L2924/00
摘要： A method of forming a metal bonding layer includes forming first and second bonding metal layers on one surfaces of first and second bonding objects, respectively. The second bonding object is disposed on the first bonding object such that the first bonding metal layer and the second bonding metal layer face each other. A eutectic metal bonding layer is formed through a reaction between the first and second bonding metal layers. At least one of the first bonding metal layer and the second bonding metal layer includes an oxidation prevention layer formed on an upper surface thereof. The oxidation prevention layer is formed of a metal having an oxidation reactivity lower than an oxidation reactivity of the bonding metal layer on the upper surface which the oxidation prevention layer is disposed.
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公开(公告)号：US09318647B2
公开(公告)日：2016-04-19
申请号：US14490438
申请日：2014-09-18
发明人： Bum Joon Kim , Seung Woo Choi , Sung Tae Kim , Young Min Park , Eun Deok Sim , Sung Pyo Lee
IPC分类号： H01L33/00 , H01L21/78 , H01L21/762
CPC分类号： H01L33/0075 , H01L21/76251 , H01L21/7806 , H01L33/0066 , H01L33/0079 , H01L2224/32225 , H01L2224/32245 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/73265 , H01L2224/8592 , H01L2924/181 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： A method of manufacturing a semiconductor light emitting device includes forming a light emitting structure layer including an active layer on a first substrate. A second substrate is bonded to the light emitting structure layer at a first temperature higher than room temperature. The first substrate is removed from the light emitting structure layer at a second temperature higher than room temperature. The second substrate and the light emitting structure are cooled to reach room temperature. A coefficient of thermal expansion of the second substrate is different from a coefficient of thermal expansion of the active layer.
摘要翻译： 制造半导体发光器件的方法包括在第一衬底上形成包括有源层的发光结构层。 第二衬底在高于室温的第一温度下结合到发光结构层。 在高于室温的第二温度下，将第一衬底从发光结构层去除。 将第二基板和发光结构冷却至室温。 第二基板的热膨胀系数与有源层的热膨胀系数不同。
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3.发明授权Semiconductor light emitting device and semiconductor light emitting apparatus having the same 有权半导体发光器件和具有该半导体发光器件的半导体发光器件公开(公告)号：US09570660B2
公开(公告)日：2017-02-14
申请号：US14799675
申请日：2015-07-15
发明人： Jae In Sim , Sang Yeob Song , Jong Hoon Ha , Gi Bum Kim , Seung Woo Choi
CPC分类号： H01L33/46 , H01L33/38 , H01L33/62 , H01L2224/16245
摘要： Provided is a semiconductor light emitting device. The semiconductor light emitting device may include: a light emitting structure comprising a first conductivity-type semiconductor layer having an upper surface divided into first and second regions, an active layer and a second conductivity-type semiconductor layer sequentially disposed on the second region of the first conductivity-type semiconductor layer; a first contact electrode disposed on the first region of the first conductivity-type semiconductor layer; a second contact electrode disposed on the second conductivity-type semiconductor layer; a first electrode pad electrically connected to the first contact electrode and having at least a portion disposed on the second contact electrode; a second electrode pad electrically connected to the second contact electrode; and a multilayer reflective structure interposed between the first electrode pad and the second contact electrode and comprising a plurality of dielectric layers which have different refractive indices and are alternately stacked.
摘要翻译： 提供了一种半导体发光器件。 半导体发光器件可以包括：发光结构，包括具有被划分为第一和第二区域的上表面的第一导电型半导体层，顺序地设置在第二区域的第二区域上的有源层和第二导电类型半导体层 第一导电型半导体层; 设置在所述第一导电型半导体层的所述第一区域上的第一接触电极; 设置在所述第二导电型半导体层上的第二接触电极; 第一电极焊盘，其电连接到所述第一接触电极并且具有设置在所述第二接触电极上的至少一部分; 电连接到第二接触电极的第二电极焊盘; 以及插入在第一电极焊盘和第二接触电极之间的多层反射结构，并且包括具有不同折射率并交替堆叠的多个电介质层。
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公开(公告)号：US09048343B2
公开(公告)日：2015-06-02
申请号：US13762983
申请日：2013-02-08
发明人： Tae Hyung Kim , Gi Bum Kim , Yu Seung Kim , Seung Woo Choi , Gyeong Seon Park , Shi Young Lee
CPC分类号： H01L33/005 , H01L33/0079
摘要： A method of manufacturing a semiconductor light emitting device, includes forming a light emitting structure on a growth substrate. The light emitting structure includes a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer. A support substrate having one or more protrusions formed on one surface thereof is prepared. The one or more protrusions formed on the one surface of the support substrate are attached to one surface of the light emitting structure. The growth substrate is separated from the light emitting structure.
摘要翻译： 一种制造半导体发光器件的方法，包括在生长衬底上形成发光结构。 发光结构包括第一导电半导体层，有源层和第二导电半导体层。 制备在其一个表面上形成有一个或多个突起的支撑基板。 形成在支撑基板的一个表面上的一个或多个突起附接到发光结构的一个表面。 生长衬底与发光结构分离。
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公开(公告)号：US20130236283A1
公开(公告)日：2013-09-12
申请号：US13751572
申请日：2013-01-28
发明人： Seung Woo Choi , Gyeong Seon Park
IPC分类号： F16M13/00
CPC分类号： F16M13/00 , H01L21/67092 , H01L21/681
摘要： A wafer aligning apparatus includes first and second wafer holders supporting first and second wafers, respectively, a holder moving unit configured to move at least one of the first and second wafer holders such that the first and second wafers are pre-aligned and face each other, one or more observing units arranged in a horizontal direction with respect to the pre-aligned first and second wafers and configured to observe edge portions of the first and second wafers in a state in which the first and second wafers are pre-aligned with each other by the holder moving unit and a controlling unit configured to control the holder moving unit to realign the first and second wafers when the edge portions of the first and second wafers are outside of a desired alignment state based on information observed by the one or more observing units.
摘要翻译： 晶片对准装置包括分别支撑第一和第二晶片的第一和第二晶片保持器，保持器移动单元，其构造成移动第一和第二晶片保持器中的至少一个，使得第一和第二晶片被预对准并面对彼此 相对于预对准的第一和第二晶片沿水平方向布置的一个或多个观察单元，并且被配置为在第一和第二晶片与每个晶片预对准的状态下观察第一和第二晶片的边缘部分 另一个由保持器移动单元和控制单元构成，该控制单元构造成当第一和第二晶片的边缘部分处于期望的取向状态之外时，基于由一个或多个观察到的信息来控制保持器移动单元重新对准第一和第二晶片 观测单位。
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公开(公告)号：US09553009B2
公开(公告)日：2017-01-24
申请号：US14522937
申请日：2014-10-24
发明人： Jae In Sim , Gyeong Seon Park , Kyung Ja Lim , Seung Woo Choi , O Hak Kwon
IPC分类号： B32B38/10 , H01L21/683 , B32B43/00 , H01L21/67 , H01L21/687
CPC分类号： H01L21/6838 , B32B43/006 , H01L21/67092 , H01L21/68735 , H01L2221/68381 , H01L2221/68386 , Y10T156/1132 , Y10T156/1153 , Y10T156/1168 , Y10T156/1911 , Y10T156/1944 , Y10T156/1978
摘要： There is provided a substrate separation device and method for separating a growth substrate from a laminate structure which includes a support substrate, a semiconductor layer, and the growth substrate. The device includes: a first base which is configured to hold the laminate structure thereon, and includes a first holding unit configured to hold the support substrate defining a bottom surface of the laminate structure and a heating unit configured to heat the laminate structure; and a second base including a second holding unit disposed above the first holding unit and configured to hold the growth substrate defining an upper surface of the laminate structure.
摘要翻译： 提供了一种用于从包括支撑衬底，半导体层和生长衬底的层压结构分离生长衬底的衬底分离装置和方法。 该装置包括：第一基座，其构造成在其上保持层压结构，并且包括第一保持单元，其构造成保持限定层压结构的底表面的支撑基板;以及加热单元，其构造成加热层叠结构; 以及第二基座，其包括设置在所述第一保持单元上方的第二保持单元，并且构造成保持限定所述层叠结构的上表面的所述生长基板。
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