Invention Grant
US09570677B2 Memory cells, integrated devices, and methods of forming memory cells
有权
存储单元，集成器件和形成存储单元的方法
- Patent Title: Memory cells, integrated devices, and methods of forming memory cells
- Patent Title (中): 存储单元，集成器件和形成存储单元的方法
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Application No.: US15049100Application Date: 2016-02-21
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Publication No.: US09570677B2Publication Date: 2017-02-14
- Inventor: Andrea Redaelli , Ugo Russo , Agostino Pirovano , Simone Lavizzari
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Wells St. John P.S.
- Main IPC: H01L45/00
- IPC: H01L45/00 ; G11C13/00
Abstract:
Some embodiments include integrated devices, such as memory cells. The devices may include chalcogenide material, an electrically conductive material over the chalcogenide material, and a thermal sink between the electrically conductive material and the chalcogenide material. The thermal sink may be of a composition that includes an element in common with the electrically conductive material and includes an element in common with the chalcogenide material. Some embodiments include a method of forming a memory cell. Chalcogenide material may be formed over heater material. Electrically conductive material may be formed over the chalcogenide material. A thermal sink may be formed between the electrically conductive material and the chalcogenide material. The thermal sink may be of a composition that includes an element in common with the electrically conductive material and includes an element in common with the chalcogenide material.
Public/Granted literature
- US20160172587A1 Memory Cells, Integrated Devices, and Methods of Forming Memory Cells Public/Granted day:2016-06-16
Information query
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