Invention Grant
US09573801B2 MEMS electrostatic actuator device for RF varactor applications
有权
用于RF变容二极管应用的MEMS静电致动器装置
- Patent Title: MEMS electrostatic actuator device for RF varactor applications
- Patent Title (中): 用于RF变容二极管应用的MEMS静电致动器装置
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Application No.: US15044016Application Date: 2016-02-15
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Publication No.: US09573801B2Publication Date: 2017-02-21
- Inventor: Arun Gupta , William C. McDonald , Adam Fruehling , Ivan Kmecko , Lance Barron , Divyanshu Agrawal
- Applicant: Texas Instruments Incorporated
- Applicant Address: US TX Dallas
- Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee Address: US TX Dallas
- Agent Jacqueline J. Garner; Charles A. Brill; Frank D. Cimino
- Main IPC: H01L27/20
- IPC: H01L27/20 ; H01L29/84 ; B81B7/00 ; B81C1/00 ; B81B3/00 ; B81B7/02

Abstract:
A MEMs actuator device and method of forming includes arrays of actuator elements. Each actuator element has a moveable top plate and a bottom plate. The top plate includes a central membrane member and a cantilever spring for movement of the central membrane member. The bottom plate consists of two RF signal lines extending under the central membrane member. A MEMs electrostatic actuator device includes a CMOS wafer, a MEMs wafer, and a ball bond assembly. Interconnections are made from a ball bond to an associated through-silicon-via (TSV) that extends through the MEMS wafer. A RF signal path includes a ball bond electrically connected through a TSV and to a horizontal feed bar and from the first horizontal feed bar vertically into each column of the array. A metal bond ring extends between the CMOS wafer and the MEMS wafer. An RF grounding loop is completed from a ground shield overlying the array to the metal bond ring, a TSV and to a ball bond.
Public/Granted literature
- US20160176701A1 MEMS ELECTROSTATIC ACTUATOR DEVICE FOR RF VARACTOR APPLICATIONS Public/Granted day:2016-06-23
Information query
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