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公开(公告)号：US20170098509A1
公开(公告)日：2017-04-06
申请号：US15385431
申请日：2016-12-20
Applicant: Texas Instruments Incorporated
Inventor： Arun Gupta , William C. McDonald , Adam Fruehling , Ivan Kmecko , Lance Barron , Divyanshu Agrawal , Arthur M. Turner , John C. Ehmke
CPC classification number: H01G5/16 , B81B3/0008 , B81B3/001 , B81B3/0013 , B81B7/0064 , B81B7/008 , B81B7/02 , B81B2201/016 , B81B2201/0221 , B81B2203/0109 , B81B2203/0118 , B81B2203/0127 , B81B2203/0181 , B81B2203/053 , B81B2203/058 , B81B2203/06 , B81B2207/012 , B81B2207/096 , B81C1/00158 , H01G5/011 , H01G5/40
Abstract: A MEMs actuator device and method of forming includes arrays of actuator elements. Each actuator element has a moveable top plate and a bottom plate. The top plate includes a central membrane member and a cantilever spring for movement of the central membrane member. The bottom plate consists of two RF signal lines extending under the central membrane member. A MEMs electrostatic actuator device includes a CMOS wafer, a MEMs wafer, and a ball bond assembly. Interconnections are made from a ball bond to an associated through-silicon-via (TSV) that extends through the MEMS wafer. A RF signal path includes a ball bond electrically connected through a TSV and to a horizontal feed bar and from the first horizontal feed bar vertically into each column of the array. A metal bond ring extends between the CMOS wafer and the MEMS wafer. An RF grounding loop is completed from a ground shield overlying the array to the metal bond ring, a TSV and to a ball bond.
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公开(公告)号：US09966194B2
公开(公告)日：2018-05-08
申请号：US15385431
申请日：2016-12-20
Applicant: Texas Instruments Incorporated
Inventor： Arun Gupta , William C. McDonald , Adam Fruehling , Ivan Kmecko , Lance Barron , Divyanshu Agrawal , Arthur M. Turner , John C. Ehmke
CPC classification number: H01G5/16 , B81B3/0008 , B81B3/001 , B81B3/0013 , B81B7/0064 , B81B7/008 , B81B7/02 , B81B2201/016 , B81B2201/0221 , B81B2203/0109 , B81B2203/0118 , B81B2203/0127 , B81B2203/0181 , B81B2203/053 , B81B2203/058 , B81B2203/06 , B81B2207/012 , B81B2207/096 , B81C1/00158 , H01G5/011 , H01G5/40
Abstract: A MEMs actuator device and method of forming includes arrays of actuator elements. Each actuator element has a moveable top plate and a bottom plate. The top plate includes a central membrane member and a cantilever spring for movement of the central membrane member. The bottom plate consists of two RF signal lines extending under the central membrane member. A MEMs electrostatic actuator device includes a CMOS wafer, a MEMs wafer, and a ball bond assembly. Interconnections are made from a ball bond to an associated through-silicon-via (TSV) that extends through the MEMS wafer. A RF signal path includes a ball bond electrically connected through a TSV and to a horizontal feed bar and from the first horizontal feed bar vertically into each column of the array. A metal bond ring extends between the CMOS wafer and the MEMS wafer. An RF grounding loop is completed from a ground shield overlying the array to the metal bond ring, a TSV and to a ball bond.
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公开(公告)号：US09573801B2
公开(公告)日：2017-02-21
申请号：US15044016
申请日：2016-02-15
Applicant: Texas Instruments Incorporated
Inventor： Arun Gupta , William C. McDonald , Adam Fruehling , Ivan Kmecko , Lance Barron , Divyanshu Agrawal
CPC classification number: H01G5/16 , B81B3/0008 , B81B3/001 , B81B3/0013 , B81B7/0064 , B81B7/008 , B81B7/02 , B81B2201/016 , B81B2201/0221 , B81B2203/0109 , B81B2203/0118 , B81B2203/0127 , B81B2203/0181 , B81B2203/053 , B81B2203/058 , B81B2203/06 , B81B2207/012 , B81B2207/096 , B81C1/00158 , H01G5/011 , H01G5/40
Abstract: A MEMs actuator device and method of forming includes arrays of actuator elements. Each actuator element has a moveable top plate and a bottom plate. The top plate includes a central membrane member and a cantilever spring for movement of the central membrane member. The bottom plate consists of two RF signal lines extending under the central membrane member. A MEMs electrostatic actuator device includes a CMOS wafer, a MEMs wafer, and a ball bond assembly. Interconnections are made from a ball bond to an associated through-silicon-via (TSV) that extends through the MEMS wafer. A RF signal path includes a ball bond electrically connected through a TSV and to a horizontal feed bar and from the first horizontal feed bar vertically into each column of the array. A metal bond ring extends between the CMOS wafer and the MEMS wafer. An RF grounding loop is completed from a ground shield overlying the array to the metal bond ring, a TSV and to a ball bond.
Abstract translation: 一种MEM致动器装置和形成方法包括致动器元件的阵列。 每个致动器元件具有可移动的顶板和底板。 顶板包括用于中心膜构件运动的中心膜构件和悬臂弹簧。 底板由在中央膜构件下方延伸的两个RF信号线组成。 MEM静电致动器装置包括CMOS晶片，MEM晶片和球接合组件。 互连由球接合到通过MEMS晶片延伸的相关的通硅通孔（TSV）。 RF信号路径包括通过TSV电连接到水平进给杆并且从第一水平进给杆垂直地连接到阵列的每一列中的球形接合。 金属结合环在CMOS晶片和MEMS晶片之间延伸。 射频接地回路从覆盖阵列的接地屏蔽到金属接合环，TSV和球接合完成。
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公开(公告)号：US20160176701A1
公开(公告)日：2016-06-23
申请号：US15044016
申请日：2016-02-15
Applicant: Texas Instruments Incorporated
Inventor： Arun Gupta , William C. McDonald , Adam Fruehling , Ivan Kmecko , Lance Barron , Divyanshu Agrawal , Arthur M. Turner , John C. Ehmke , James C. Baker
CPC classification number: H01G5/16 , B81B3/0008 , B81B3/001 , B81B3/0013 , B81B7/0064 , B81B7/008 , B81B7/02 , B81B2201/016 , B81B2201/0221 , B81B2203/0109 , B81B2203/0118 , B81B2203/0127 , B81B2203/0181 , B81B2203/053 , B81B2203/058 , B81B2203/06 , B81B2207/012 , B81B2207/096 , B81C1/00158 , H01G5/011 , H01G5/40
Abstract: A MEMs actuator device and method of forming includes arrays of actuator elements. Each actuator element has a moveable top plate and a bottom plate. The top plate includes a central membrane member and a cantilever spring for movement of the central membrane member. The bottom plate consists of two RF signal lines extending under the central membrane member. A MEMs electrostatic actuator device includes a CMOS wafer, a MEMs wafer, and a ball bond assembly. Interconnections are made from a ball bond to an associated through-silicon-via (TSV) that extends through the MEMS wafer. A RF signal path includes a ball bond electrically connected through a TSV and to a horizontal feed bar and from the first horizontal feed bar vertically into each column of the array. A metal bond ring extends between the CMOS wafer and the MEMS wafer. An RF grounding loop is completed from a ground shield overlying the array to the metal bond ring, a TSV and to a ball bond.
Abstract translation: 一种MEM致动器装置和形成方法包括致动器元件的阵列。 每个致动器元件具有可移动的顶板和底板。 顶板包括用于中心膜构件运动的中心膜构件和悬臂弹簧。 底板由在中央膜构件下方延伸的两个RF信号线组成。 MEM静电致动器装置包括CMOS晶片，MEM晶片和球接合组件。 互连由球接合到通过MEMS晶片延伸的相关的通硅通孔（TSV）。 RF信号路径包括通过TSV电连接到水平进给杆并且从第一水平进给杆垂直地连接到阵列的每一列中的球形接合。 金属结合环在CMOS晶片和MEMS晶片之间延伸。 射频接地回路从覆盖阵列的接地屏蔽到金属接合环，TSV和球接合完成。
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