Invention Grant
US09575386B2 Thin film transistor substrate, method of manufacturing the same and display device having the same
有权
薄膜晶体管基板及其制造方法以及具有该薄膜晶体管基板的显示装置
- Patent Title: Thin film transistor substrate, method of manufacturing the same and display device having the same
- Patent Title (中): 薄膜晶体管基板及其制造方法以及具有该薄膜晶体管基板的显示装置
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Application No.: US13961714Application Date: 2013-08-07
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Publication No.: US09575386B2Publication Date: 2017-02-21
- Inventor: Jin-Young Choi , Jae-Sung Kim , Cha-Dong Kim
- Applicant: Samsung Display Co., Ltd.
- Applicant Address: KR
- Assignee: Samsung Display Co., Ltd.
- Current Assignee: Samsung Display Co., Ltd.
- Current Assignee Address: KR
- Agency: Innovation Counsel LLP
- Priority: KR10-2013-0008689 20130125
- Main IPC: G02F1/1368
- IPC: G02F1/1368 ; G02F1/1345 ; H01L27/12 ; G02F1/1333

Abstract:
A thin film transistor substrate is provided. The thin film transistor substrate includes a display area including a plurality of pixels, wherein the pixels are connected to gate lines and data lines, a gate driver connected to the gate lines, a plurality of data pads connected to the data lines, a plurality of dummy pattern parts formed of a same layer as the gate lines, and a non-display area in which the gate driver, data pads, and dummy pattern parts are disposed, and the dummy pattern parts are disposed in an area within the non-display area where the gate driver is not disposed, and one of the dummy pattern parts is disposed overlapping with the data pads.
Public/Granted literature
- US20140211117A1 THIN FILM TRANSISTOR SUBSTRATE, METHOD OF MANUFACTURING THE SAME AND DISPLAY DEVICE HAVING THE SAME Public/Granted day:2014-07-31
Information query
IPC分类: