Invention Grant
- Patent Title: High frequency circuit comprising graphene and method of operating the same
- Patent Title (中): 包括石墨烯的高频电路及其操作方法
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Application No.: US13543050Application Date: 2012-07-06
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Publication No.: US09576916B2Publication Date: 2017-02-21
- Inventor: Hyeon-jin Shin , Jae-young Choi , Seong-chan Jun , Whan-kyun Kim , Hyung-seo Yoon , Ju-yeong Oh , Ju-hwan Lim
- Applicant: Hyeon-jin Shin , Jae-young Choi , Seong-chan Jun , Whan-kyun Kim , Hyung-seo Yoon , Ju-yeong Oh , Ju-hwan Lim
- Applicant Address: KR Gyeonggi-do KR Seoul
- Assignee: SAMSUNG ELECTRONICS CO., LTD.,INDUSTRY-ACADEMIC COOPERATION FOUNDATION, YONSEI UNIVERSITY
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.,INDUSTRY-ACADEMIC COOPERATION FOUNDATION, YONSEI UNIVERSITY
- Current Assignee Address: KR Gyeonggi-do KR Seoul
- Agency: Cantor Colburn LLP
- Priority: KR10-2011-0067971 20110708
- Main IPC: H01L23/66
- IPC: H01L23/66 ; H01L23/532 ; H01L27/04
Abstract:
A high frequency circuit includes a first electronic device, a second electronic device, and a graphene interconnection unit, where at least one of a trench and a via is defined under the graphene interconnection unit.
Public/Granted literature
- US20130175676A1 HIGH FREQUENCY CIRCUIT COMPRISING GRAPHENE AND METHOD OF OPERATING THE SAME Public/Granted day:2013-07-11
Information query
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