Invention Grant
US09576978B2 Cells including at least one fin field effect transistor and semiconductor integrated circuits including the same
有权
包括至少一个鳍式场效应晶体管和包括该鳍式场效应晶体管的半导体集成电路的单元
- Patent Title: Cells including at least one fin field effect transistor and semiconductor integrated circuits including the same
- Patent Title (中): 包括至少一个鳍式场效应晶体管和包括该鳍式场效应晶体管的半导体集成电路的单元
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Application No.: US14042900Application Date: 2013-10-01
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Publication No.: US09576978B2Publication Date: 2017-02-21
- Inventor: Sang-hoon Baek , Sang-Kyu Oh
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce
- Priority: KR10-2012-0112089 20121009; KR10-2012-0126164 20121108
- Main IPC: H01L27/12
- IPC: H01L27/12 ; H01L21/8234 ; H01L21/84 ; H01L29/66 ; H01L27/088
Abstract:
A semiconductor integrated circuit (IC) may comprise at least one cell comprising at least one fin field-effect transistor (FET). The at least one cell may comprise a plurality of fins that extend in a first direction and are arranged in parallel to each other in a second direction that is perpendicular to the first direction. A size of the at least one cell in the second direction may correspond to a number and a pitch of the plurality of fins.
Public/Granted literature
Information query
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