Invention Grant
US09577058B2 Devices, systems, and methods related to removing parasitic conduction in semiconductor devices
有权
与去除半导体器件中的寄生导通相关的器件,系统和方法
- Patent Title: Devices, systems, and methods related to removing parasitic conduction in semiconductor devices
- Patent Title (中): 与去除半导体器件中的寄生导通相关的器件,系统和方法
-
Application No.: US14796974Application Date: 2015-07-10
-
Publication No.: US09577058B2Publication Date: 2017-02-21
- Inventor: Martin F. Schubert , Vladimir Odnoblyudov , Cem Basceri , Thomas Gehrke
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Perkins Coie LLP
- Main IPC: H01L29/15
- IPC: H01L29/15 ; H01L29/423 ; H01L29/205 ; H01L29/06 ; H01L29/778 ; H01L29/20 ; H01L29/417

Abstract:
Semiconductor devices and methods for making semiconductor devices are disclosed herein. A method configured in accordance with a particular embodiment includes forming a stack of semiconductor materials from an epitaxial substrate, where the stack of semiconductor materials defines a heterojunction, and where the stack of semiconductor materials and the epitaxial substrate further define a bulk region that includes a portion of the semiconductor stack adjacent the epitaxial substrate. The method further includes attaching the stack of semiconductor materials to a carrier, where the carrier is configured to provide a signal path to the heterojunction. The method also includes exposing the bulk region by removing the epitaxial substrate.
Public/Granted literature
- US20150318388A1 DEVICES, SYSTEMS, AND METHODS RELATED TO REMOVING PARASITIC CONDUCTION IN SEMICONDUCTOR DEVICES Public/Granted day:2015-11-05
Information query
IPC分类: