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    BACK-TO-BACK SOLID STATE LIGHTING DEVICES AND ASSOCIATED METHODS
    2.
    发明申请
    BACK-TO-BACK SOLID STATE LIGHTING DEVICES AND ASSOCIATED METHODS 有权

    公开(公告)号：US20210288041A1

    公开(公告)日：2021-09-16

    申请号：US17330086

    申请日：2021-05-25

    Applicant: Micron Technology, Inc.

    Inventor： Cem Basceri ,  Casey Kurth ,  Kevin Tetz

    IPC: H01L25/00 ,  H01L33/38 ,  H01L25/075 ,  H01L33/48 ,  H01L33/50 ,  H01L33/62

    Abstract: Solid state lights (SSLs) including a back-to-back solid state emitters (SSEs) and associated methods are disclosed herein. In various embodiments, an SSL can include a carrier substrate having a first surface and a second surface different from the first surface. First and second through substrate interconnects (TSIs) can extend from the first surface of the carrier substrate to the second surface. The SSL can further include a first and a second SSE, each having a front side and a back side opposite the front side. The back side of the first SSE faces the first surface of the carrier substrate and the first SSE is electrically coupled to the first and second TSIs. The back side of the second SSE faces the second surface of the carrier substrate and the second SSE is electrically coupled to the first and second TSIs.

    Light emitting devices with built-in chromaticity conversion and methods of manufacturing
    4.
    发明授权
    Light emitting devices with built-in chromaticity conversion and methods of manufacturing 有权
    具有内置色度转换和制造方法的发光装置

    公开(公告)号：US09184336B2

    公开(公告)日：2015-11-10

    申请号：US14489344

    申请日：2014-09-17

    Applicant: Micron Technology, Inc.

    Inventor： Cem Basceri ,  Thomas Gehrke ,  Charles M. Watkins

    IPC: H01L21/00 ,  H01L33/00 ,  H01L33/50 ,  H01L33/06 ,  H01L33/08 ,  H01L33/38

    CPC classification number: H01L33/0075 ,  H01L33/005 ,  H01L33/06 ,  H01L33/08 ,  H01L33/38 ,  H01L33/502 ,  H01L33/508 ,  H01L2933/0033 ,  H01L2933/0041

    Abstract: Various embodiments of light emitting devices with built-in chromaticity conversion and associated methods of manufacturing are described herein. In one embodiment, a method for manufacturing a light emitting device includes forming a first semiconductor material, an active region, and a second semiconductor material on a substrate material in sequence, the active region being configured to produce a first emission. A conversion material is then formed on the second semiconductor material. The conversion material has a crystalline structure and is configured to produce a second emission. The method further includes adjusting a characteristic of the conversion material such that a combination of the first and second emission has a chromaticity at least approximating a target chromaticity of the light emitting device.

    Abstract translation: 本文描述了具有内置色度转换和相关制造方法的发光器件的各种实施例。 在一个实施例中，制造发光器件的方法包括依次在衬底材料上形成第一半导体材料，有源区和第二半导体材料，所述有源区被配置为产生第一发射。 然后在第二半导体材料上形成转换材料。 转换材料具有晶体结构并且被配置为产生第二发射。 该方法还包括调整转换材料的特性，使得第一和第二发射的组合具有至少近似于发光器件的目标色度的色度。

    DEVICES, SYSTEMS, AND METHODS RELATED TO REMOVING PARASITIC CONDUCTION IN SEMICONDUCTOR DEVICES
    5.
    发明申请
    DEVICES, SYSTEMS, AND METHODS RELATED TO REMOVING PARASITIC CONDUCTION IN SEMICONDUCTOR DEVICES 有权
    与半导体器件中的移除导通相关的器件，系统和方法

    公开(公告)号：US20150318388A1

    公开(公告)日：2015-11-05

    申请号：US14796974

    申请日：2015-07-10

    Applicant: Micron Technology, Inc.

    Inventor： Martin F. Schubert ,  Vladimir Odnoblyudov ,  Cem Basceri ,  Thomas Gehrke

    IPC: H01L29/778 ,  H01L29/06 ,  H01L29/205

    CPC classification number: H01L29/42316 ,  H01L29/0603 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/4175 ,  H01L29/7786 ,  H01L29/7787 ,  H01L2224/16227

    Abstract: Semiconductor devices and methods for making semiconductor devices are disclosed herein. A method configured in accordance with a particular embodiment includes forming a stack of semiconductor materials from an epitaxial substrate, where the stack of semiconductor materials defines a heterojunction, and where the stack of semiconductor materials and the epitaxial substrate further define a bulk region that includes a portion of the semiconductor stack adjacent the epitaxial substrate. The method further includes attaching the stack of semiconductor materials to a carrier, where the carrier is configured to provide a signal path to the heterojunction. The method also includes exposing the bulk region by removing the epitaxial substrate.

    Abstract translation: 本文公开了用于制造半导体器件的半导体器件和方法。 根据特定实施例配置的方法包括从外延衬底形成半导体材料的堆叠，其中半导体材料堆叠限定异质结，并且其中半导体材料和外延衬底的堆叠进一步限定主体区域，其包括 邻近外延衬底的半导体堆叠部分。 该方法还包括将半导体材料堆叠附接到载体，其中载体被配置为提供到异质结的信号路径。 该方法还包括通过去除外延衬底来暴露体区。

    Back-to-back solid state lighting devices and associated methods
    6.
    发明授权
    Back-to-back solid state lighting devices and associated methods 有权

    公开(公告)号：US12191298B2

    公开(公告)日：2025-01-07

    申请号：US18340602

    申请日：2023-06-23

    Applicant: Micron Technology, Inc.

    Inventor： Cem Basceri ,  Casey Kurth ,  Kevin Tetz

    IPC: H01L25/00 ,  H01L25/075 ,  H01L33/38 ,  H01L33/48 ,  H01L33/50 ,  H01L33/62 ,  H05K1/02 ,  H05K1/03

    Abstract: Solid state lights (SSLs) including a back-to-back solid state emitters (SSEs) and associated methods are disclosed herein. In various embodiments, an SSL can include a carrier substrate having a first surface and a second surface different from the first surface. First and second through substrate interconnects (TSIs) can extend from the first surface of the carrier substrate to the second surface. The SSL can further include a first and a second SSE, each having a front side and a back side opposite the front side. The back side of the first SSE faces the first surface of the carrier substrate and the first SSE is electrically coupled to the first and second TSIs. The back side of the second SSE faces the second surface of the carrier substrate and the second SSE is electrically coupled to the first and second TSIs.

    Methods, devices, and systems related to forming semiconductor power devices with a handle substrate
    7.
    发明授权
    Methods, devices, and systems related to forming semiconductor power devices with a handle substrate 有权

    公开(公告)号：US11581405B2

    公开(公告)日：2023-02-14

    申请号：US15626634

    申请日：2017-06-19

    Applicant: Micron Technology, Inc.

    Inventor： Martin F. Schubert ,  Vladimir Odnoblyudov ,  Cem Basceri

    IPC: H01L29/10 ,  H01L21/683 ,  H01L29/778 ,  H01L29/06 ,  H01L27/06 ,  H01L29/66 ,  H01L29/423 ,  H01L29/20

    Abstract: Methods of manufacturing device assemblies, as well as associated semiconductor assemblies, devices, systems are disclosed herein. In one embodiment, a method of forming a semiconductor device assembly includes forming a semiconductor device assembly that includes a handle substrate, a semiconductor structure having a first side and a second side opposite the first side, and an intermediary material between the semiconductor structure and the handle substrate. The method also includes removing material from the semiconductor structure to form an opening extending from the first side of the semiconductor structure to at least the intermediary material at the second side of the semiconductor structure. The method further includes removing at least a portion of the intermediary material through the opening in the semiconductor structure to undercut the second side of the semiconductor structure.

    Back-to-back solid state lighting devices and associated methods
    8.
    发明授权
    Back-to-back solid state lighting devices and associated methods 有权

    公开(公告)号：US11037918B2

    公开(公告)日：2021-06-15

    申请号：US16046686

    申请日：2018-07-26

    Applicant: Micron Technology, Inc.

    Inventor： Cem Basceri ,  Casey Kurth ,  Kevin Tetz

    IPC: H01L25/00 ,  H01L33/38 ,  H01L25/075 ,  H01L33/48 ,  H01L33/50 ,  H01L33/62 ,  H05K1/02 ,  H05K1/03

    Abstract: Solid state lights (SSLs) including a back-to-back solid state emitters (SSEs) and associated methods are disclosed herein. In various embodiments, an SSL can include a carrier substrate having a first surface and a second surface different from the first surface. First and second through substrate interconnects (TSIs) can extend from the first surface of the carrier substrate to the second surface. The SSL can further include a first and a second SSE, each having a front side and a back side opposite the front side. The back side of the first SSE faces the first surface of the carrier substrate and the first SSE is electrically coupled to the first and second TSIs. The back side of the second SSE faces the second surface of the carrier substrate and the second SSE is electrically coupled to the first and second TSIs.

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