Invention Grant
US09580791B2 Vapor deposition mask, and manufacturing method and manufacturing device for organic EL element using vapor deposition mask
有权
气相沉积掩模,以及使用气相沉积掩模的有机EL元件的制造方法和制造装置
- Patent Title: Vapor deposition mask, and manufacturing method and manufacturing device for organic EL element using vapor deposition mask
- Patent Title (中): 气相沉积掩模,以及使用气相沉积掩模的有机EL元件的制造方法和制造装置
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Application No.: US13697164Application Date: 2011-04-26
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Publication No.: US09580791B2Publication Date: 2017-02-28
- Inventor: Satoshi Inoue , Shinichi Kawato , Nobuhiro Hayashi , Tohru Sonoda
- Applicant: Satoshi Inoue , Shinichi Kawato , Nobuhiro Hayashi , Tohru Sonoda
- Applicant Address: JP Osaka
- Assignee: Sharp Kabushiki Kaisha
- Current Assignee: Sharp Kabushiki Kaisha
- Current Assignee Address: JP Osaka
- Agency: Morrison & Foerster LLP
- Priority: JP2010-122926 20100528
- International Application: PCT/JP2011/060150 WO 20110426
- International Announcement: WO2011/148750 WO 20111201
- Main IPC: C23C16/04
- IPC: C23C16/04 ; H05B33/10 ; C23C14/04 ; B05C21/00 ; H01L51/00 ; H01L51/50

Abstract:
A vapor deposition mask (70) includes a first layer (71), a second layer (72) and a third layer (73) in this order. A plurality of first openings (71h), a plurality of second openings (72h) and a plurality of third openings (73h) are formed respectively in the first layer, the second layer and the third layer. The first openings, the second openings and the third openings communicate with each other, thereby constituting mask openings (75). The opening dimension of the second openings is larger than the opening dimension of the first openings and is larger than the opening dimension of the third openings. With this configuration, it is possible to prevent reduction of the opening dimension of the mask openings or clogging of the mask openings due to the vapor deposition particles adhering to the mask openings.
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