Invention Grant
- Patent Title: Interconnects through dielecric vias
- Patent Title (中): 通过薄膜通孔互连
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Application No.: US14762799Application Date: 2013-01-29
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Publication No.: US09583432B2Publication Date: 2017-02-28
- Inventor: Kevin Dooley , Roger McQuaid , Liam Cheevers , David Fitzpatrick , Lorraine Byrne
- Applicant: Hewlett-Packard Development Company, L.P.
- Applicant Address: US TX Houston
- Assignee: Hewlett-Packard Development Company, L.P.
- Current Assignee: Hewlett-Packard Development Company, L.P.
- Current Assignee Address: US TX Houston
- Agency: HP Inc. Patent Department
- International Application: PCT/US2013/023586 WO 20130129
- International Announcement: WO2014/120118 WO 20140807
- Main IPC: H01L23/00
- IPC: H01L23/00 ; H01L23/522 ; H01L23/532 ; H01L21/768 ; H01L23/528 ; H01L27/12
Abstract:
A dielectric layer includes a reflow via. The reflow via is formed by reflow of the dielectric layer. An interconnect is in contact through the reflow via.
Public/Granted literature
- US20160104675A1 INTERCONNECTS THROUGH DIELECRIC VIAS Public/Granted day:2016-04-14
Information query
IPC分类:
