公开(公告)号：US09780028B2

公开(公告)日：2017-10-03

申请号：US15364240

申请日：2016-11-29

Applicant: Hewlett-Packard Development Company, L.P.

Inventor： Kevin Dooley ,  Roger McQuaid ,  Liam Cheevers ,  David Fitzpatrick ,  Lorraine Byrne

IPC: H01L23/00 ,  H01L23/522 ,  H01L23/532 ,  H01L21/768 ,  H01L23/528 ,  H01L27/12

CPC classification number: H01L23/5226 ,  H01L21/76802 ,  H01L21/76828 ,  H01L21/76877 ,  H01L23/528 ,  H01L23/5283 ,  H01L23/5329 ,  H01L27/1214 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A dielectric layer includes a reflow via. The reflow via is formed by reflow of the dielectric layer away from a raised feature. An interconnect is in contact with the raised feature through the reflow via.

公开(公告)号：US20140199522A1

公开(公告)日：2014-07-17

申请号：US13744187

申请日：2013-01-17

Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.

Inventor： Richard Coull ,  Kevin Dooley ,  David Fitzpatrick

IPC: B32B3/30 ,  B32B5/16

CPC classification number: H05K3/1258 ,  G03F7/0002 ,  H05K1/097 ,  H05K2201/09036 ,  H05K2201/09045 ,  Y10T428/24479 ,  Y10T428/24579

Abstract: Devices with nanosized particles deposited on shaped surface geometries include a substrate with an active material of nanosized particles deposited on a surface of the substrate. The active material has an edge formed at a position determined with a shaped geometry of the surface.

Abstract translation: 沉积在成形表面几何上的纳米尺寸颗粒的装置包括具有沉积在基底表面上的纳米尺寸颗粒的活性材料的基底。 活性材料具有形成在由表面的成形几何形状确定的位置处的边缘。

公开(公告)号：US09583432B2

公开(公告)日：2017-02-28

申请号：US14762799

申请日：2013-01-29

Applicant: Hewlett-Packard Development Company, L.P.

Inventor： Kevin Dooley ,  Roger McQuaid ,  Liam Cheevers ,  David Fitzpatrick ,  Lorraine Byrne

IPC: H01L23/00 ,  H01L23/522 ,  H01L23/532 ,  H01L21/768 ,  H01L23/528 ,  H01L27/12

CPC classification number: H01L23/5226 ,  H01L21/76802 ,  H01L21/76828 ,  H01L21/76877 ,  H01L23/528 ,  H01L23/5283 ,  H01L23/5329 ,  H01L27/1214 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A dielectric layer includes a reflow via. The reflow via is formed by reflow of the dielectric layer. An interconnect is in contact through the reflow via.

Abstract translation: 电介质层包括回流通孔。 回流通孔由电介质层的回流形成。 互连通过回流通孔接触。

公开(公告)号：US20170084533A1

公开(公告)日：2017-03-23

申请号：US15364240

申请日：2016-11-29

Applicant: Hewlett-Packard Development Company, L.P.

Inventor： Kevin Dooley ,  Roger McQuaid ,  Liam Cheevers ,  David Fitzpatrick ,  Lorraine Byrne

IPC: H01L23/522 ,  H01L23/528 ,  H01L23/532 ,  H01L21/768

CPC classification number: H01L23/5226 ,  H01L21/76802 ,  H01L21/76828 ,  H01L21/76877 ,  H01L23/528 ,  H01L23/5283 ,  H01L23/5329 ,  H01L27/1214 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A dielectric layer includes a reflow via. The reflow via is formed by reflow of the dielectric layer away from a raised feature. An interconnect is in contact with the raised feature through the reflow via.

公开(公告)号：US09609755B2

公开(公告)日：2017-03-28

申请号：US13744187

申请日：2013-01-17

Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.

Inventor： Richard Coull ,  Kevin Dooley ,  David Fitzpatrick

IPC: B32B3/30 ,  B32B5/16 ,  H05K3/10 ,  H05K3/14 ,  H05K3/12 ,  G03F7/00 ,  H05K1/09

CPC classification number: H05K3/1258 ,  G03F7/0002 ,  H05K1/097 ,  H05K2201/09036 ,  H05K2201/09045 ,  Y10T428/24479 ,  Y10T428/24579

Abstract: Devices with nanosized particles deposited on shaped surface geometries include a substrate with an active material of nanosized particles deposited on a surface of the substrate. The active material has an edge formed at a position determined with a shaped geometry of the surface.