公开(公告)号：US09583432B2

公开(公告)日：2017-02-28

申请号：US14762799

申请日：2013-01-29

Applicant: Hewlett-Packard Development Company, L.P.

Inventor： Kevin Dooley ,  Roger McQuaid ,  Liam Cheevers ,  David Fitzpatrick ,  Lorraine Byrne

IPC: H01L23/00 ,  H01L23/522 ,  H01L23/532 ,  H01L21/768 ,  H01L23/528 ,  H01L27/12

CPC classification number: H01L23/5226 ,  H01L21/76802 ,  H01L21/76828 ,  H01L21/76877 ,  H01L23/528 ,  H01L23/5283 ,  H01L23/5329 ,  H01L27/1214 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A dielectric layer includes a reflow via. The reflow via is formed by reflow of the dielectric layer. An interconnect is in contact through the reflow via.

Abstract translation: 电介质层包括回流通孔。 回流通孔由电介质层的回流形成。 互连通过回流通孔接触。

公开(公告)号：US20170084533A1

公开(公告)日：2017-03-23

申请号：US15364240

申请日：2016-11-29

Applicant: Hewlett-Packard Development Company, L.P.

Inventor： Kevin Dooley ,  Roger McQuaid ,  Liam Cheevers ,  David Fitzpatrick ,  Lorraine Byrne

IPC: H01L23/522 ,  H01L23/528 ,  H01L23/532 ,  H01L21/768

CPC classification number: H01L23/5226 ,  H01L21/76802 ,  H01L21/76828 ,  H01L21/76877 ,  H01L23/528 ,  H01L23/5283 ,  H01L23/5329 ,  H01L27/1214 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A dielectric layer includes a reflow via. The reflow via is formed by reflow of the dielectric layer away from a raised feature. An interconnect is in contact with the raised feature through the reflow via.

公开(公告)号：US09780028B2

公开(公告)日：2017-10-03

申请号：US15364240

申请日：2016-11-29

Applicant: Hewlett-Packard Development Company, L.P.

Inventor： Kevin Dooley ,  Roger McQuaid ,  Liam Cheevers ,  David Fitzpatrick ,  Lorraine Byrne

IPC: H01L23/00 ,  H01L23/522 ,  H01L23/532 ,  H01L21/768 ,  H01L23/528 ,  H01L27/12

CPC classification number: H01L23/5226 ,  H01L21/76802 ,  H01L21/76828 ,  H01L21/76877 ,  H01L23/528 ,  H01L23/5283 ,  H01L23/5329 ,  H01L27/1214 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A dielectric layer includes a reflow via. The reflow via is formed by reflow of the dielectric layer away from a raised feature. An interconnect is in contact with the raised feature through the reflow via.

公开(公告)号：US09776409B2

公开(公告)日：2017-10-03

申请号：US15305026

申请日：2014-04-24

Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.

Inventor： Kevin Dooley ,  John Larkin ,  Liam Cheevers ,  Kenneth Hickey ,  Graeme Scott

IPC: B41J2/14 ,  B41J2/16

CPC classification number: B41J2/1433 ,  B41J2/1603 ,  B41J2/162 ,  B41J2/1631

Abstract: A method for forming a fluidic ejection device is described. The method includes depositing a first layer on a silicon wafer, the first layer including a first photoresist, and exposing, at a first energy level, a portion of the first photoresist. The method also includes depositing a second layer on the first layer, the second layer including a second photoresist that is more sensitive to light than the first photoresist, and exposing, at a second energy level, a portion of the second photoresist. The second energy level is less than the first energy level. The method also includes developing unexposed portions of the first photoresist and the second photoresist to form an enclosed firing chamber and a nozzle.

公开(公告)号：US20170151781A1

公开(公告)日：2017-06-01

申请号：US15305026

申请日：2014-04-24

Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.

Inventor： Kevin Dooley ,  John Larkin ,  Liam Cheevers ,  Kenneth Hickey ,  Graeme Scott

IPC: B41J2/14 ,  B41J2/16

CPC classification number: B41J2/1433 ,  B41J2/1603 ,  B41J2/162 ,  B41J2/1631

Abstract: A method for forming a fluidic ejection device is described. The method includes depositing a first layer on a silicon wafer, the first layer including a first photoresist, and exposing, at a first energy level, a portion of the first photoresist. The method also includes depositing a second layer on the first layer, the second layer including a second photoresist that is more sensitive to light than the first photoresist, and exposing, at a second energy level, a portion of the second photoresist. The second energy level is less than the first energy level. The method also includes developing unexposed portions of the first photoresist and the second photoresist to form an enclosed firing chamber and a nozzle.