Invention Grant
US09583609B2 MOS transistor structure and method of forming the structure with vertically and horizontally-elongated metal contacts
有权
MOS晶体管结构以及用垂直和水平延伸的金属触点形成结构的方法
- Patent Title: MOS transistor structure and method of forming the structure with vertically and horizontally-elongated metal contacts
- Patent Title (中): MOS晶体管结构以及用垂直和水平延伸的金属触点形成结构的方法
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Application No.: US13850192Application Date: 2013-03-25
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Publication No.: US09583609B2Publication Date: 2017-02-28
- Inventor: Russell Carlton McMullan , Kamel Benaissa
- Applicant: Texas Instruments Incorporated
- Applicant Address: US TX Dallas
- Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee Address: US TX Dallas
- Agent Jacqueline J. Garner; Charles A. Brill; Frank D. Cimino
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L29/78 ; H01L21/311 ; H01L21/8234 ; H01L21/8238 ; H01L27/02 ; H01L21/768
Abstract:
Elongated metal contacts with longitudinal axes that lie in a first direction are formed to make electrical connections to elongated source and drain regions with longitudinal axes that lie in the first direction, and elongated metal contacts with longitudinal axes that lie a second direction are formed to make electrical connections to elongated source and drain regions with longitudinal axes that lie the second direction, where the second direction lies orthogonal to the first direction.
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