Invention Grant
- Patent Title: Semiconductor device and method for fabricating the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US14793721Application Date: 2015-07-07
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Publication No.: US09583627B2Publication Date: 2017-02-28
- Inventor: Yu-Cheng Tung , En-Chiuan Liou
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu; Scott Margo
- Priority: CN201510311866 20150609
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L29/165 ; H01L29/78 ; H01L29/66 ; H01L21/324 ; H01L29/167 ; H01L21/306 ; H01L21/02
Abstract:
A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate having at least a fin-shaped structure thereon and the fin-shaped structure includes a top portion and a bottom portion; forming a gate structure on the fin-shaped structure; forming a cap layer on the top portion of the fin-shaped structure not covered by the gate structure; performing an annealing process to drive germanium from the cap layer to the top portion of the fin-shaped structure; removing the cap layer; and forming an epitaxial layer around the top portion of the fin-shaped structure.
Public/Granted literature
- US20160365452A1 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME Public/Granted day:2016-12-15
Information query
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