Invention Grant
- Patent Title: Integrated plasmonic circuit and method of manufacturing the same
- Patent Title (中): 集成等离子体电路及其制造方法
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Application No.: US15052305Application Date: 2016-02-24
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Publication No.: US09583650B1Publication Date: 2017-02-28
- Inventor: Kyoungsik Yu , Kyungmok Kwon , Kyunghan Choi
- Applicant: KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY
- Applicant Address: KR Daejeon
- Assignee: Korea Advanced Institute of Science and Technology
- Current Assignee: Korea Advanced Institute of Science and Technology
- Current Assignee Address: KR Daejeon
- Agent John D. Russell
- Priority: KR10-2016-0005556 20160115
- Main IPC: H01L29/00
- IPC: H01L29/00 ; H01L31/0232 ; G02B6/122 ; G01N21/65 ; B82Y10/00 ; H01L49/00 ; G02B5/00 ; G01N21/552

Abstract:
Provided are a integrated plasmonic circuit including a plasmonic source using a surface plasmon resonance phenomenon, a plasmonic detector detecting an optical signal generated in the plasmonic source, and a link structure between the plasmonic source and the plasmonic detector, that is, a signal transferring part, and a method of manufacturing the same. Provided are a integrated plasmonic circuit capable of realizing both of miniaturization and speed improvement by overcoming both of a limitation of an electronic device in terms of a signal speed in spite of being excellent in terms of miniaturization efficiency and a limitation of an existing optical device in terms of miniaturization due to a diffraction limitation of light in spite of being improved in terms of a signal speed, and a method of manufacturing the same.
Information query
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