Invention Grant
- Patent Title: Reference layer for perpendicular magnetic anisotropy magnetic tunnel junction
- Patent Title (中): 垂直磁各向异性磁隧道结的参考层
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Application No.: US14460731Application Date: 2014-08-15
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Publication No.: US09583696B2Publication Date: 2017-02-28
- Inventor: Matthias Georg Gottwald , Chando Park , Xiaochun Zhu , Kangho Lee , Seung Hyuk Kang
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agency: Toler Law Group, PC
- Main IPC: G11C11/16
- IPC: G11C11/16 ; H01L43/08
Abstract:
An apparatus includes a perpendicular magnetic anisotropy magnetic tunnel junction (pMTJ) device. The pMTJ device includes a storage layer and a reference layer. The reference layer includes a portion configured to produce a ferrimagnetic effect. The portion includes a first layer, a second layer, and a third layer. The second layer is configured to antiferromagnetically (AF) couple the first layer and the third layer during operation of the pMTJ device.
Public/Granted literature
- US20150263266A1 REFERENCE LAYER FOR PERPENDICULAR MAGNETIC ANISOTROPY MAGNETIC TUNNEL JUNCTION Public/Granted day:2015-09-17
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