Invention Grant
- Patent Title: Semiconductor laser element
- Patent Title (中): 半导体激光元件
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Application No.: US14771911Application Date: 2014-02-27
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Publication No.: US09583914B2Publication Date: 2017-02-28
- Inventor: Kazuyoshi Hirose , Akiyoshi Watanabe , Yoshitaka Kurosaka , Takahiro Sugiyama , Susumu Noda
- Applicant: Kyoto University , HAMAMATSU PHOTONICS K.K.
- Applicant Address: JP Kyoto-shi, Kyoto JP Hamamatsu-shi, Shizuoka
- Assignee: Kyoto University,HAMAMATSU PHOTONICS K.K.
- Current Assignee: Kyoto University,HAMAMATSU PHOTONICS K.K.
- Current Assignee Address: JP Kyoto-shi, Kyoto JP Hamamatsu-shi, Shizuoka
- Agency: Drinker Biddle & Reath LLP
- Priority: JP2013-041973 20130304; JP2013-202086 20130927
- International Application: PCT/JP2014/054916 WO 20140227
- International Announcement: WO2014/136653 WO 20140912
- Main IPC: H01S5/00
- IPC: H01S5/00 ; H01S5/18 ; H01S3/08 ; H01S5/183 ; H01S5/042 ; H01S5/10 ; H01S5/12

Abstract:
A semiconductor laser element is realized with high beam quality (index M2
Public/Granted literature
- US20160020581A1 SEMICONDUCTOR LASER ELEMENT Public/Granted day:2016-01-21
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