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US09584088B2 Method for manufacturing acoustic wave device 有权
制造声波装置的方法

Method for manufacturing acoustic wave device
摘要:
A method for manufacturing an acoustic wave device with an excellent frequency-temperature profile is performed such that the acoustic wave device produced includes a piezoelectric substrate, an IDT electrode located on the piezoelectric substrate, and a dielectric film mainly including Si and O and arranged on the piezoelectric substrate to cover the IDT electrode. The dielectric film is formed by sputtering in a sputtering gas containing H2O.
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