Invention Grant
- Patent Title: Unidirectional spin torque transfer magnetic memory cell structure
- Patent Title (中): 单向自旋转矩传递磁存储单元结构
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Application No.: US14553758Application Date: 2014-11-25
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Publication No.: US09589618B2Publication Date: 2017-03-07
- Inventor: Jun Liu , Gurtej Sandhu
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Fletcher Yoder, P.C.
- Main IPC: G11C11/16
- IPC: G11C11/16 ; H01L43/02
Abstract:
Spin torque transfer magnetic random access memory devices configured to be programmed unidirectionally and methods of programming such devices. The devices include memory cells having two pinned layers and a free layer therebetween. By utilizing two pinned layers, the spin torque effect on the free layer from each of the two pinned layers, respectively, allows the memory cells to be programmed with unidirectional currents.
Public/Granted literature
- US20150078073A1 UNIDIRECTIONAL SPIN TORQUE TRANSFER MAGNETIC MEMORY CELL STRUCTURE Public/Granted day:2015-03-19
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