发明授权
- 专利标题: Cleaning method and composition in photolithography
- 专利标题(中): 光刻中的清洗方法和组成
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申请号: US14471738申请日: 2014-08-28
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公开(公告)号: US09589785B2公开(公告)日: 2017-03-07
- 发明人: Ya-Ling Cheng , Chien-Wei Wang
- 申请人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 申请人地址: TW Hsin-Chu
- 专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址: TW Hsin-Chu
- 代理机构: Haynes and Boone, LLP
- 主分类号: H01L21/02
- IPC分类号: H01L21/02 ; B08B3/10 ; C11D11/00 ; G03F1/00
摘要:
The present disclosure provides one embodiment of a method. The method includes applying a first cleaning fluid to a substrate, thereby cleaning the substrate and forming a protection layer on the substrate; and applying a removing process to the substrate, thereby removing the protection layer from the substrate. The first cleaning fluid includes a cleaning chemical, a protection additive and a solvent.
公开/授权文献
- US20160059272A1 Cleaning Method And Composition In Photolithography 公开/授权日:2016-03-03
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