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公开(公告)号：US10048590B2
公开(公告)日：2018-08-14
申请号：US14727317
申请日：2015-06-01
发明人： Chien-Wei Wang , Ming-Feng Shieh , Ching-Yu Chang
IPC分类号： G03F7/42 , G03F7/40 , G03F7/004 , G03F7/039 , G03F7/038 , H01L21/311 , H01L21/306
摘要： Provided is a photoresist that includes a polymer having a backbone that is breakable and a photo acid generator that is free of bonding from the polymer. Further, provided is a method of fabricating a semiconductor device. The method includes providing a device substrate. A material layer is formed over the substrate. A photoresist material is formed over the material layer. The photoresist material has a polymer that includes a backbone. The photoresist material is patterned to form a patterned photoresist layer. A fabrication process is then performed to the material layer, wherein the patterned photoresist layer serves as a mask in the fabrication process. Thereafter, the patterned photoresist layer is treated in a manner that breaks the backbone of the polymer. The patterned photoresist layer is then removed.
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公开(公告)号：US20170075216A1
公开(公告)日：2017-03-16
申请号：US14851093
申请日：2015-09-11
发明人： Yen-Hao Chen , Chien-Wei Wang
CPC分类号： G03F7/0045 , G03F7/004 , G03F7/038 , G03F7/039 , G03F7/2004 , G03F7/2059 , G03F7/30
摘要： The present disclosure is directed to a photoresist and a method of performing a lithography process using the photoresist. The photoresist contains a polymer and a photo-acid generator. The photo-acid generator contains a sensitizer component, an acid generator component, and a bonding component that bonds the sensitizer component to the acid generator component. The bonding component may be either a single bond or a conjugated bond. The lithography process may be an EUV lithography process or an e-beam lithography process.
摘要翻译： 本公开涉及光致抗蚀剂和使用光致抗蚀剂进行光刻工艺的方法。 光致抗蚀剂含有聚合物和光酸发生剂。 光酸产生剂含有敏化剂组分，酸产生剂组分和将敏化剂组分结合到酸产生剂组分的粘合组分。 结合组分可以是单键或共轭键。 光刻工艺可以是EUV光刻工艺或电子束光刻工艺。
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公开(公告)号：US20170017158A1
公开(公告)日：2017-01-19
申请号：US14802756
申请日：2015-07-17
发明人： Ya-Ling Cheng , Ching-Yu Chang , Chien-Wei Wang , Yen-Hao Chen
摘要： One of the broader forms of the present disclosure relates to a method of making a semiconductor device. The method includes exposing a photoresist layer to a radiation source and applying a hardening agent to the photoresist layer. Therefore after applying the hardening agent a first portion of the photoresist layer has a higher glass transition temperature, higher mechanical strength, than a second portion of the photoresist layer.
摘要翻译： 本公开的更广泛形式之一涉及制造半导体器件的方法。 该方法包括将光致抗蚀剂层暴露于辐射源并将硬化剂施加到光致抗蚀剂层。 因此，在施加硬化剂之后，光致抗蚀剂层的第一部分具有比光致抗蚀剂层的第二部分更高的玻璃化转变温度，更高的机械强度。
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公开(公告)号：US20160059272A1
公开(公告)日：2016-03-03
申请号：US14471738
申请日：2014-08-28
发明人： Ya-Ling Cheng , Chien-Wei Wang
CPC分类号： H01L21/02041 , B08B3/10 , C11D11/0047 , G03F1/00 , G03F1/82
摘要： The present disclosure provides one embodiment of a method. The method includes applying a first cleaning fluid to a substrate, thereby cleaning the substrate and forming a protection layer on the substrate; and applying a removing process to the substrate, thereby removing the protection layer from the substrate. The first cleaning fluid includes a cleaning chemical, a protection additive and a solvent.
摘要翻译： 本公开提供了一种方法的实施例。 该方法包括将第一清洁流体施加到基底上，由此清洁基底并在基底上形成保护层; 并向基板施加去除工艺，从而从基板移除保护层。 第一清洗流体包括清洁化学品，保护添加剂和溶剂。
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公开(公告)号：US09864275B2
公开(公告)日：2018-01-09
申请号：US14632793
申请日：2015-02-26
发明人： Ching-Yu Chang , Chien-Wei Wang , Hsueh-An Chen
IPC分类号： G03F7/004 , G03F7/11 , H01L21/027 , G03F7/20 , G03F7/16 , G03F7/32 , G03F7/075 , C08F220/38 , C08L33/16 , C08F220/26 , H01L21/308 , C08F220/22 , C08F220/24
CPC分类号： G03F7/11 , C08F220/22 , C08F220/24 , C08F220/26 , C08F220/38 , C08L33/16 , C08L2205/025 , G03F7/004 , G03F7/0046 , G03F7/0758 , G03F7/168 , G03F7/20 , G03F7/2041 , G03F7/325 , H01L21/0274 , H01L21/3081
摘要： An improved resist material and a technique for patterning a workpiece such as an integrated circuit workpiece that offers improved resistance to environmental contaminants is provided. In an exemplary embodiment, the method includes receiving a workpiece and applying to the workpiece a resist material containing a protectant disbursed throughout. A thermal process is performed on the workpiece that causes the protectant to become concentrated in an upper region of the resist material. The resist material is exposed in a lithographic process and the exposed resist material is developed to define a pattern within the resist material. In some such examples, the protectant is selected to reduce an effect of an environmental contaminant without affecting an acid/base ratio of the resist material. In some such embodiments, the protectant includes a hydrophobic functional group.
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公开(公告)号：US20160254142A1
公开(公告)日：2016-09-01
申请号：US14632793
申请日：2015-02-26
发明人： Ching-Yu Chang , Chien-Wei Wang , Hsueh-An Chen
IPC分类号： H01L21/027 , G03F7/16 , G03F7/20 , H01L21/02 , H01L21/308
CPC分类号： G03F7/11 , C08F220/22 , C08F220/24 , C08F220/26 , C08F220/38 , C08L33/16 , C08L2205/025 , G03F7/004 , G03F7/0046 , G03F7/0758 , G03F7/168 , G03F7/20 , G03F7/2041 , G03F7/325 , H01L21/0274 , H01L21/3081
摘要： An improved resist material and a technique for patterning a workpiece such as an integrated circuit workpiece that offers improved resistance to environmental contaminants is provided. In an exemplary embodiment, the method includes receiving a workpiece and applying to the workpiece a resist material containing a protectant disbursed throughout. A thermal process is performed on the workpiece that causes the protectant to become concentrated in an upper region of the resist material. The resist material is exposed in a lithographic process and the exposed resist material is developed to define a pattern within the resist material. In some such examples, the protectant is selected to reduce an effect of an environmental contaminant without affecting an acid/base ratio of the resist material. In some such embodiments, the protectant includes a hydrophobic functional group.
摘要翻译： 提供改进的抗蚀剂材料和用于图案化诸如集成电路工件的工件的技术，其提供改善的对环境污染物的抵抗性。 在示例性实施例中，该方法包括接收工件并向工件施加含有保护剂的抗蚀剂材料，该抗蚀剂材料贯穿于该材料。 对工件进行热处理，使得保护剂变得集中在抗蚀剂材料的上部区域中。 抗蚀剂材料在光刻工艺中暴露，并且曝光的抗蚀剂材料被显影以在抗蚀剂材料内限定图案。 在一些这样的实例中，保护剂被选择以减少环境污染物的影响而不影响抗蚀剂材料的酸/碱比。 在一些这样的实施方案中，保护剂包括疏水官能团。
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公开(公告)号：US10468249B2
公开(公告)日：2019-11-05
申请号：US14868043
申请日：2015-09-28
发明人： Chien-Chih Chen , Chien-Wei Wang
IPC分类号： H01L21/033 , H01L21/027 , G03F7/09
摘要： A lithography method is provided in accordance with some embodiments. The lithography method includes forming a metal-containing layer on a substrate, the metal-containing layer including a plurality of conjugates of metal-hydroxyl groups; treating the metal-containing layer at temperature that is lower than about 300° C. thereby causing a condensation reaction involving the plurality of conjugates of metal-hydroxyl groups; forming a patterned photosensitive layer on the treated metal-containing layer; and developing the patterned photosensitive layer so as to allow at least about 6% decrease of optimum exposure (Eop).
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公开(公告)号：US20170092495A1
公开(公告)日：2017-03-30
申请号：US14868043
申请日：2015-09-28
发明人： Chien-Chih Chen , Chien-Wei Wang
IPC分类号： H01L21/033 , H01L21/027
CPC分类号： H01L21/0337 , G03F7/091 , G03F7/094 , H01L21/0271 , H01L21/0273
摘要： A lithography method is provided in accordance with some embodiments. The lithography method includes forming a metal-containing layer on a substrate, the metal-containing layer including a plurality of conjugates of metal-hydroxyl groups; treating the metal-containing layer at temperature that is lower than about 300° C. thereby causing a condensation reaction involving the plurality of conjugates of metal-hydroxyl groups; forming a patterned photosensitive layer on the treated metal-containing layer; and developing the patterned photosensitive layer so as to allow at least about 6% decrease of optimum exposure (Eop).
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公开(公告)号：US20150262835A1
公开(公告)日：2015-09-17
申请号：US14727317
申请日：2015-06-01
发明人： Chien-Wei Wang , Ming-Feng Shieh , Chign-Yu Chang
IPC分类号： H01L21/311 , G03F7/004 , H01L21/306
CPC分类号： G03F7/42 , G03F7/0045 , G03F7/0382 , G03F7/0392 , G03F7/40 , G03F7/422 , G03F7/423 , H01L21/30604 , H01L21/31133
摘要： Provided is a photoresist that includes a polymer having a backbone that is breakable and a photo acid generator that is free of bonding from the polymer. Further, provided is a method of fabricating a semiconductor device. The method includes providing a device substrate. A material layer is formed over the substrate. A photoresist material is formed over the material layer. The photoresist material has a polymer that includes a backbone. The photoresist material is patterned to form a patterned photoresist layer. A fabrication process is then performed to the material layer, wherein the patterned photoresist layer serves as a mask in the fabrication process. Thereafter, the patterned photoresist layer is treated in a manner that breaks the backbone of the polymer. The patterned photoresist layer is then removed.
摘要翻译： 提供一种光致抗蚀剂，其包括具有可破坏的主链的聚合物和不与聚合物结合的光酸产生剂。 此外，提供了制造半导体器件的方法。 该方法包括提供器件衬底。 材料层形成在衬底上。 在材料层上形成光致抗蚀剂材料。 光致抗蚀剂材料具有包括骨架的聚合物。 图案化光致抗蚀剂材料以形成图案化的光致抗蚀剂层。 然后对材料层进行制造工艺，其中图案化的光致抗蚀剂层在制造过程中用作掩模。 此后，以破坏聚合物主链的方式处理图案化的光刻胶层。 然后去除图案化的光致抗蚀剂层。
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公开(公告)号：US09589785B2
公开(公告)日：2017-03-07
申请号：US14471738
申请日：2014-08-28
发明人： Ya-Ling Cheng , Chien-Wei Wang
CPC分类号： H01L21/02041 , B08B3/10 , C11D11/0047 , G03F1/00 , G03F1/82
摘要： The present disclosure provides one embodiment of a method. The method includes applying a first cleaning fluid to a substrate, thereby cleaning the substrate and forming a protection layer on the substrate; and applying a removing process to the substrate, thereby removing the protection layer from the substrate. The first cleaning fluid includes a cleaning chemical, a protection additive and a solvent.
摘要翻译： 本公开提供了一种方法的实施例。 该方法包括将第一清洁流体施加到基底上，由此清洁基底并在基底上形成保护层; 并向基板施加去除工艺，从而从基板移除保护层。 第一清洗流体包括清洁化学品，保护添加剂和溶剂。
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