Invention Grant
US09589792B2 High quality group-III metal nitride crystals, methods of making, and methods of use
有权
高品质III族金属氮化物晶体，制备方法和使用方法
- Patent Title: High quality group-III metal nitride crystals, methods of making, and methods of use
- Patent Title (中): 高品质III族金属氮化物晶体，制备方法和使用方法
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Application No.: US14089281Application Date: 2013-11-25
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Publication No.: US09589792B2Publication Date: 2017-03-07
- Inventor: Wenkan Jiang , Mark P. D'Evelyn , Derrick S. Kamber , Dirk Ehrentraut , Michael Krames
- Applicant: SORAA, INC.
- Applicant Address: US CA Fremont
- Assignee: Soraa, Inc.
- Current Assignee: Soraa, Inc.
- Current Assignee Address: US CA Fremont
- Agency: Saul Ewing LLP
- Main IPC: H01L29/20
- IPC: H01L29/20 ; H01L21/02 ; H01L33/00 ; C30B7/10 ; C30B29/40
Abstract:
High quality ammonothermal group III metal nitride crystals having a pattern of locally-approximately-linear arrays of threading dislocations, methods of manufacturing high quality ammonothermal group III metal nitride crystals, and methods of using such crystals are disclosed. The crystals are useful for seed bulk crystal growth and as substrates for light emitting diodes, laser diodes, transistors, photodetectors, solar cells, and for photoelectrochemical water splitting for hydrogen generation devices.
Public/Granted literature
- US20140147650A1 HIGH QUALITY GROUP-III METAL NITRIDE CRYSTALS, MEHODS OF MAKING, AND METHODS OF USE Public/Granted day:2014-05-29
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