公开(公告)号：US10400352B2

公开(公告)日：2019-09-03

申请号：US15426770

申请日：2017-02-07

Applicant: Soraa, Inc.

Inventor： Mark P. D'Evelyn ,  James S. Speck ,  Derrick S. Kamber ,  Douglas W. Pocius

IPC: C30B7/10 ,  H01L21/02 ,  H01L29/20 ,  C30B25/02 ,  C30B25/18 ,  C30B29/40 ,  C30B33/06 ,  C30B19/06 ,  C30B19/12

Abstract: Techniques for processing materials in supercritical fluids including processing in a capsule disposed within a high-pressure apparatus enclosure are disclosed. The disclosed techniques are useful for growing crystals of GaN, AlN, InN, and their alloys, including InGaN, AlGaN, and AlInGaN for the manufacture of bulk or patterned substrates, which in turn can be used to make optoelectronic devices, lasers, light emitting diodes, solar cells, photoelectrochemical water splitting and hydrogen generation devices, photodetectors, integrated circuits, and transistors.

公开(公告)号：US09985179B2

公开(公告)日：2018-05-29

申请号：US15700562

申请日：2017-09-11

Applicant: SORAA, INC.

Inventor： Thomas M. Katona ,  James W. Raring ,  Mark P. D'Evelyn ,  Michael R. Krames ,  Aurelien J. F. David

IPC: H01L33/00 ,  H01L33/20 ,  H05B33/08 ,  H01L33/16 ,  H01L33/32

CPC classification number: H01L33/20 ,  H01L33/0075 ,  H01L33/02 ,  H01L33/16 ,  H01L33/32 ,  H01L33/405 ,  H05B33/0842

Abstract: A light emitting diode device has a bulk gallium and nitrogen containing substrate with an active region. The device has a lateral dimension and a thick vertical dimension such that the geometric aspect ratio forms a volumetric diode that delivers a nearly uniform current density across the range of the lateral dimension.

公开(公告)号：US20170145585A1

公开(公告)日：2017-05-25

申请号：US15426770

申请日：2017-02-07

Applicant: Soraa, Inc.

Inventor： Mark P. D'Evelyn ,  James S. Speck ,  Derrick S. Kamber ,  Douglas W. Pocius

IPC: C30B7/10 ,  H01L21/02 ,  C30B33/06 ,  C30B19/06 ,  C30B29/40 ,  H01L29/20 ,  C30B19/12

CPC classification number: C30B7/105 ,  C30B19/068 ,  C30B19/12 ,  C30B25/02 ,  C30B25/18 ,  C30B29/403 ,  C30B29/406 ,  C30B33/06 ,  H01L21/0254 ,  H01L21/02609 ,  H01L29/2003

Abstract: Techniques for processing materials in supercritical fluids including processing in a capsule disposed within a high-pressure apparatus enclosure are disclosed. The disclosed techniques are useful for growing crystals of GaN, AlN, InN, and their alloys, including InGaN, AlGaN, and AlInGaN for the manufacture of bulk or patterned substrates, which in turn can be used to make optoelectronic devices, lasers, light emitting diodes, solar cells, photoelectrochemical water splitting and hydrogen generation devices, photodetectors, integrated circuits, and transistors.

公开(公告)号：US08686458B2

公开(公告)日：2014-04-01

申请号：US13931359

申请日：2013-06-28

Applicant: Soraa, Inc.

Inventor： Michael R. Krames ,  Mark P. D'Evelyn ,  James W. Raring ,  Thomas M. Katona

IPC: H01L29/22 ,  H05B37/02

CPC classification number: H05B37/02 ,  H01L33/16 ,  H01L33/32 ,  H01L33/405 ,  H01L2224/16 ,  H01L2224/48

Abstract: A light emitting diode device emitting at a wavelength of 390-415 nm has a bulk gallium and nitrogen containing substrate with an active region. The device has a current density of greater than about 175 Amps/cm2 and an external quantum efficiency with a roll off of less than about 5% absolute efficiency.

Abstract translation: 发射波长为390-415nm的发光二极管器件具有具有活性区域的大量含镓和氮的衬底。 该器件的电流密度大于约175安培/厘米2，外部量子效率具有小于约5％的绝对效率。

公开(公告)号：US09299555B1

公开(公告)日：2016-03-29

申请号：US14033107

申请日：2013-09-20

Applicant: SORAA, INC.

Inventor： Alex Alexander ,  John W. Nink, Jr. ,  Mark P. D'Evelyn

IPC: C30B9/12 ,  H01L21/02 ,  C30B7/10 ,  C30B9/04 ,  C30B9/08 ,  C30B29/38

CPC classification number: C30B29/38 ,  C30B7/105 ,  C30B9/04 ,  C30B9/08 ,  C30B9/12 ,  C30B29/403

Abstract: An ultrapure mineralizer is formed by vaporization, condensation, and delivery of a condensable mineralizer composition. The mineralizer has an oxygen content below 100 parts per million. The ultrapure mineralizer is useful as a raw material for ammonothermal growth of bulk group III metal nitride crystals.

Abstract translation: 通过蒸发，冷凝和递送可冷凝矿化剂组合物形成超纯矿化剂。 矿化剂的氧含量低于100ppm。 超纯矿化剂可用作本体III族金属氮化物晶体的氨热生长原料。

公开(公告)号：US09275912B1

公开(公告)日：2016-03-01

申请号：US14013753

申请日：2013-08-29

Applicant: SORAA, INC.

Inventor： Wenkan Jiang ,  Dirk Ehrentraut ,  Bradley C. Downey ,  Mark P. D'Evelyn

IPC: H01L29/04 ,  H01L31/036 ,  H01L33/16 ,  H01L21/66

CPC classification number: H01L22/12 ,  H01L22/24

Abstract: Methods for quantifying extended defects in a gallium-containing nitride crystal, wafer, or device, are disclosed. The methods include providing a gallium-containing nitride crystal, wafer, or device, processing the gallium-containing nitride crystal, wafer, or device in an etchant solution comprising one or more of H3PO4, H3PO4 that has been conditioned by prolonged heat treatment to form polyphosphoric acid, and H2SO4; removing the gallium-containing nitride crystal, wafer, or device from the etchant solution; and quantifying the concentration of at least one of etch pits or etch grooves.

Abstract translation: 公开了用于量化含氮氮化物晶体，晶片或器件中的扩展缺陷的方法。 所述方法包括提供含镓氮化物晶体，晶片或器件，在包含通过长时间热处理调理的H3PO4，H3PO4中的一种或多种的蚀刻剂溶液中处理含镓氮化物晶体，晶片或器件以形成 多磷酸和H2SO4; 从蚀刻剂溶液中除去含镓氮化物晶体，晶片或器件; 以及量化蚀刻坑或蚀刻槽中的至少一个的浓度。

公开(公告)号：US20130270516A1

公开(公告)日：2013-10-17

申请号：US13623788

申请日：2012-09-20

Applicant: Soraa, Inc.

Inventor： Mark P. D'Evelyn ,  Rajat Sharma ,  Eric M. Hall ,  Daniel F. Feezell

IPC: H01L33/50 ,  H01L33/32

CPC classification number: H01L33/50 ,  H01L33/16 ,  H01L33/32 ,  H01L33/38 ,  H01L33/405 ,  H01L33/44 ,  H01L33/505 ,  H01L33/507 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/12044 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A light emitting device includes a substrate having a surface region and a light emitting diode overlying the surface region. The light emitting diode is fabricated on a semipolar or nonpolar GaN containing substrate and emits electromagnetic radiation of a first wavelength. The diode includes a quantum well region characterized by an electron wave function and a hole wave function. The electron wave function and the hole wave function are substantially overlapped within a predetermined spatial region of the quantum well region. The device has a transparent phosphor overlying the light emitting diode. The phosphor is excited by the substantially polarized emission to emit electromagnetic radiation of a second wavelength.

Abstract translation: 发光器件包括具有覆盖表面区域的表面区域和发光二极管的衬底。 发光二极管制造在含有半极性或非极性GaN的衬底上并且发射第一波长的电磁辐射。 二极管包括以电子波函数和空穴波函数为特征的量子阱区域。 电子波函数和空穴波函数在量子阱区域的预定空间区域内基本上重叠。 该器件具有覆盖发光二极管的透明磷光体。 磷光体被基本上极化的发射激发以发射第二波长的电磁辐射。

公开(公告)号：US10553754B2

公开(公告)日：2020-02-04

申请号：US15991951

申请日：2018-05-29

Applicant: SORAA, INC.

Inventor： Thomas M. Katona ,  James W. Raring ,  Mark P. D'Evelyn ,  Michael R. Krames ,  Aurelien J. F. David

IPC: H01L33/20 ,  H01L33/00 ,  H05B33/08 ,  H01L33/02 ,  H01L33/16 ,  H01L33/32 ,  H01L33/40

Abstract: A light emitting diode device has a bulk gallium and nitrogen containing substrate with an active region. The device has a lateral dimension and a thick vertical dimension such that the geometric aspect ratio forms a volumetric diode that delivers a nearly uniform current density across the range of the lateral dimension.

公开(公告)号：US20180195206A1

公开(公告)日：2018-07-12

申请号：US15865391

申请日：2018-01-09

Applicant: SORAA, INC.

Inventor： Wenkan Jiang ,  Dirk Ehrentraut ,  Mark P. D'Evelyn

IPC: C30B29/40 ,  C01B21/06

CPC classification number: C30B29/406 ,  C01B21/0632 ,  C01P2002/30 ,  C01P2002/74 ,  C01P2002/80 ,  C01P2006/80 ,  C30B7/105

Abstract: A gallium-containing nitride crystals are disclosed, comprising: a top surface having a crystallographic orientation within about 5 degrees of a plane selected from a (0001) +c-plane and a (000-1) −c-plane; a substantially wurtzite structure; n-type electronic properties; an impurity concentration of hydrogen greater than about 5×1017 cm−3; an impurity concentration of oxygen between about 2×1017 cm−3 and about 1×1020 cm−3; an [H]/[O] ratio of at least 0.3; an impurity concentration of at least one of Li, Na, K, Rb, Cs, Ca, F, and Cl greater than about 1×1016 cm−3; a compensation ratio between about 1.0 and about 4.0; an absorbance per unit thickness of at least 0.01 cm−1 at wavenumbers of approximately 3175 cm−1, 3164 cm−1, and 3150 cm−1; and wherein, at wavenumbers between about 3200 cm−1 and about 3400 cm−1 and between about 3075 cm−1 and about 3125 cm−1, said gallium-containing nitride crystal is essentially free of infrared absorption peaks having an absorbance per unit thickness greater than 10% of the absorbance per unit thickness at 3175 cm

公开(公告)号：US09724666B1

公开(公告)日：2017-08-08

申请号：US13656615

申请日：2012-10-19

Applicant: Soraa, Inc.

Inventor： Pakalapati Tirumala Rajeev ,  Douglas W. Pocius ,  Mark P. D'Evelyn

IPC: B01J19/06 ,  C30B7/10 ,  C30B35/00

CPC classification number: B01J19/06 ,  A61B6/12 ,  A61M25/00 ,  A61M25/0105 ,  A61M25/0113 ,  A61M25/09 ,  A61M25/09041 ,  A61M25/0905 ,  A61M2025/09133 ,  C30B7/10 ,  C30B35/00

Abstract: An apparatus to contain the reaction vessel in which gallium nitride crystals (henceforth referred to as bulk crystals) can be grown using the ammonothermal method at high pressure and temperature is disclosed. The apparatus provides adequate containment in all directions, which, for a typical cylindrical vessel, can be classified as radial and axial. Furthermore, depending on the specifics of the design parameters, the apparatus is capable of operating at a temperature up to 1,200 degrees Celsius, a pressure up to 2,000 MPa, and for whatever length of time is necessary to grow satisfactory bulk crystals. The radial constraint in the current disclosure is provided by using several stacked composite rings. The design of the apparatus is scalable to contain reaction volumes larger than 100 cubic centimeters.