Invention Grant
- Patent Title: Maintaining mask integrity to form openings in wafers
- Patent Title (中): 保持掩模完整性，以在晶片上形成开口
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Application No.: US14071591Application Date: 2013-11-04
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Publication No.: US09589832B2Publication Date: 2017-03-07
- Inventor: Daisuke Shimizu , Jong Mun Kim
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: APPLIED MATERIALS, INC.
- Current Assignee: APPLIED MATERIALS, INC.
- Current Assignee Address: US CA Santa Clara
- Agency: Blakely, Sokoloff, Taylor & Zafman LLP
- Main IPC: H01L21/302
- IPC: H01L21/302 ; H01L21/768 ; H01L21/311 ; H01L21/283 ; H01L21/67
Abstract:
One or more openings in an organic mask layer deposited on a first insulating layer over a substrate are formed. One or more openings in the first insulating layer are formed through the openings in the organic mask using a first iodine containing gas. An antireflective layer can be deposited on the organic mask layer. One or more openings in the antireflective layer are formed down to the organic mask layer using a second iodine containing gas. The first insulating layer can be deposited on a second insulating layer over the substrate. One or more openings in the second insulating layer can be formed using a third iodine containing gas.
Public/Granted literature
- US20140065824A1 MAINTAINING MASK INTEGRITY TO FORM OPENINGS IN WAFERS Public/Granted day:2014-03-06
Information query
IPC分类:
