Invention Grant
US09589851B2 Dipole-based contact structure to reduce metal-semiconductor contact resistance in MOSFETs
有权
偶极子接触结构，以减少MOSFET中的金属 - 半导体接触电阻
- Patent Title: Dipole-based contact structure to reduce metal-semiconductor contact resistance in MOSFETs
- Patent Title (中): 偶极子接触结构，以减少MOSFET中的金属 - 半导体接触电阻
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Application No.: US14800970Application Date: 2015-07-16
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Publication No.: US09589851B2Publication Date: 2017-03-07
- Inventor: Huiming Bu , Hui-feng Li , Vijay Narayanan , Hiroaki Niimi , Tenko Yamashita
- Applicant: International Business Machines Corporation , GlobalFoundries, Inc. , The Research Foundation for The State University of New York
- Applicant Address: US NY Armonk KY Grand Cayman US NY Albany
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION,GLOBALFOUNDRIES INC.,THE RESEARCH FOUNDATION FOR THE STATE UNIVERSITY OF NEW YORK
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION,GLOBALFOUNDRIES INC.,THE RESEARCH FOUNDATION FOR THE STATE UNIVERSITY OF NEW YORK
- Current Assignee Address: US NY Armonk KY Grand Cayman US NY Albany
- Agency: Cantor Colburn LLP
- Agent Vazken Alexanian
- Main IPC: H01L23/532
- IPC: H01L23/532 ; H01L23/528 ; H01L27/092 ; H01L21/8238 ; H01L23/535
Abstract:
A transistor device includes a substrate; a source region and a drain region formed over the substrate; and a source/drain contact formed in contact with at least one of the source region and the drain region, the source/drain contact including a conductive metal and a bilayer disposed between the conductive metal and the at least one of the source and drain region, the bilayer including a metal oxide layer in contact with the conductive metal, and a silicon dioxide layer in contact with the at least one of the source and drain region.
Public/Granted literature
- US20170018463A1 Dipole-Based Contact Structure to Reduce Metal-Semiconductor Contact Resistance in MOSFETs Public/Granted day:2017-01-19
Information query
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