公开(公告)号：US10153201B2

公开(公告)日：2018-12-11

申请号：US15417848

申请日：2017-01-27

申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION ,  GlobalFoundries, Inc. ,  The Research Foundation for The State University of New York

发明人： Huiming Bu ,  Hui-feng Li ,  Vijay Narayanan ,  Hiroaki Niimi ,  Tenko Yamashita

IPC分类号： H01L21/768 ,  H01L21/8238 ,  H01L23/535 ,  H01L23/528 ,  H01L23/532 ,  H01L29/66 ,  H01L29/78 ,  H01L21/285 ,  H01L23/485 ,  H01L29/08 ,  H01L27/092

摘要： A transistor device includes a substrate; a source region and a drain region formed over the substrate; and a source/drain contact formed in contact with at least one of the source region and the drain region, the source/drain contact including a conductive metal and a bilayer disposed between the conductive metal and the at least one of the source and drain region, the bilayer including a metal oxide layer in contact with the conductive metal, and a silicon dioxide layer in contact with the at least one of the source and drain region.

公开(公告)号：US20170133265A1

公开(公告)日：2017-05-11

申请号：US15417848

申请日：2017-01-27

申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION ,  GlobalFoundries, Inc. ,  The Research Foundation for The State University of New York

发明人： Huiming Bu ,  Hui-feng Li ,  Vijay Narayanan ,  Hiroaki Niimi ,  Tenko Yamashita

IPC分类号： H01L21/768 ,  H01L29/78 ,  H01L23/535 ,  H01L29/66 ,  H01L23/532

CPC分类号： H01L21/76832 ,  H01L21/285 ,  H01L21/76805 ,  H01L21/76831 ,  H01L21/76843 ,  H01L21/76895 ,  H01L21/76897 ,  H01L21/823821 ,  H01L21/823871 ,  H01L23/485 ,  H01L23/5283 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53266 ,  H01L23/5329 ,  H01L23/535 ,  H01L27/092 ,  H01L27/0924 ,  H01L29/0895 ,  H01L29/66795 ,  H01L29/7851

摘要： A transistor device includes a substrate; a source region and a drain region formed over the substrate; and a source/drain contact formed in contact with at least one of the source region and the drain region, the source/drain contact including a conductive metal and a bilayer disposed between the conductive metal and the at least one of the source and drain region, the bilayer including a metal oxide layer in contact with the conductive metal, and a silicon dioxide layer in contact with the at least one of the source and drain region.

公开(公告)号：US09589851B2

公开(公告)日：2017-03-07

申请号：US14800970

申请日：2015-07-16

申请人： International Business Machines Corporation ,  GlobalFoundries, Inc. ,  The Research Foundation for The State University of New York

发明人： Huiming Bu ,  Hui-feng Li ,  Vijay Narayanan ,  Hiroaki Niimi ,  Tenko Yamashita

IPC分类号： H01L23/532 ,  H01L23/528 ,  H01L27/092 ,  H01L21/8238 ,  H01L23/535

CPC分类号： H01L21/76832 ,  H01L21/285 ,  H01L21/76805 ,  H01L21/76831 ,  H01L21/76843 ,  H01L21/76895 ,  H01L21/76897 ,  H01L21/823821 ,  H01L21/823871 ,  H01L23/485 ,  H01L23/5283 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53266 ,  H01L23/5329 ,  H01L23/535 ,  H01L27/092 ,  H01L27/0924 ,  H01L29/0895 ,  H01L29/66795 ,  H01L29/7851

摘要： A transistor device includes a substrate; a source region and a drain region formed over the substrate; and a source/drain contact formed in contact with at least one of the source region and the drain region, the source/drain contact including a conductive metal and a bilayer disposed between the conductive metal and the at least one of the source and drain region, the bilayer including a metal oxide layer in contact with the conductive metal, and a silicon dioxide layer in contact with the at least one of the source and drain region.

摘要翻译： 晶体管器件包括衬底; 形成在所述基板上的源极区域和漏极区域; 以及与所述源极区域和所述漏极区域中的至少一个接触形成的源极/漏极接触部，所述源极/漏极接触部包括导电金属和设置在所述导电金属与所述源极和漏极区域中的至少一个之间的双层 包括与导电金属接触的金属氧化物层的双层以及与源区和漏区中的至少一个接触的二氧化硅层。

公开(公告)号：US20170018463A1

公开(公告)日：2017-01-19

申请号：US14800970

申请日：2015-07-16

申请人： International Business Machines Corporation ,  GlobalFoundries, Inc. ,  The Research Foundation for The State University of New York

发明人： Huiming Bu ,  Hui-feng Li ,  Vijay Narayanan ,  Hiroaki Niimi ,  Tenko Yamashita

IPC分类号： H01L21/8238 ,  H01L23/535 ,  H01L27/092

CPC分类号： H01L21/76832 ,  H01L21/285 ,  H01L21/76805 ,  H01L21/76831 ,  H01L21/76843 ,  H01L21/76895 ,  H01L21/76897 ,  H01L21/823821 ,  H01L21/823871 ,  H01L23/485 ,  H01L23/5283 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53266 ,  H01L23/5329 ,  H01L23/535 ,  H01L27/092 ,  H01L27/0924 ,  H01L29/0895 ,  H01L29/66795 ,  H01L29/7851

摘要： A transistor device includes a substrate; a source region and a drain region formed over the substrate; and a source/drain contact formed in contact with at least one of the source region and the drain region, the source/drain contact including a conductive metal and a bilayer disposed between the conductive metal and the at least one of the source and drain region, the bilayer including a metal oxide layer in contact with the conductive metal, and a silicon dioxide layer in contact with the at least one of the source and drain region.

摘要翻译： 晶体管器件包括衬底; 形成在所述基板上的源极区域和漏极区域; 以及与所述源极区域和所述漏极区域中的至少一个接触形成的源极/漏极接触部，所述源极/漏极接触部包括导电金属和设置在所述导电金属与所述源极和漏极区域中的至少一个之间的双层 包括与导电金属接触的金属氧化物层的双层以及与源区和漏区中的至少一个接触的二氧化硅层。

公开(公告)号：US10361281B2

公开(公告)日：2019-07-23

申请号：US15911892

申请日：2018-03-05

申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION ,  GLOBALFOUNDRIES Inc.

发明人： Takashi Ando ,  Eduard A. Cartier ,  Kisik Choi ,  Vijay Narayanan

IPC分类号： H01L21/02 ,  H01L21/28 ,  H01L29/66 ,  H01L21/321 ,  H01L21/324 ,  H01L29/423 ,  H01L21/3205

摘要： A method of fabricating a replacement gate stack for a semiconductor device includes the following steps after removal of a dummy gate: growing a high-k dielectric layer over the area vacated by the dummy gate; depositing a thin metal layer over the high-k dielectric layer; depositing a sacrificial layer over the thin metal layer; performing a first rapid thermal anneal; removing the sacrificial layer; and depositing a metal layer of low resistivity metal for gap fill.

公开(公告)号：US20180197972A1

公开(公告)日：2018-07-12

申请号：US15911892

申请日：2018-03-05

申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION ,  GLOBALFOUNDRIES Inc.

发明人： Takashi Ando ,  Eduard A. Cartier ,  Kisik Choi ,  Vijay Narayanan

IPC分类号： H01L29/66 ,  H01L21/02 ,  H01L21/3205 ,  H01L21/324 ,  H01L21/28 ,  H01L29/423 ,  H01L21/321

CPC分类号： H01L29/66795 ,  H01L21/02532 ,  H01L21/02592 ,  H01L21/02595 ,  H01L21/28017 ,  H01L21/28088 ,  H01L21/32055 ,  H01L21/321 ,  H01L21/324 ,  H01L29/4232 ,  H01L29/66 ,  H01L29/66545 ,  H01L29/6681

摘要： A method of fabricating a replacement gate stack for a semiconductor device includes the following steps after removal of a dummy gate: growing a high-k dielectric layer over the area vacated by the dummy gate; depositing a thin metal layer over the high-k dielectric layer; depositing a sacrificial layer over the thin metal layer; performing a first rapid thermal anneal; removing the sacrificial layer; and depositing a metal layer of low resistivity metal for gap fill.

公开(公告)号：US09960252B2

公开(公告)日：2018-05-01

申请号：US15258597

申请日：2016-09-07

申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION ,  GLOBALFOUNDRIES Inc.

发明人： Takashi Ando ,  Eduard A. Cartier ,  Kisik Choi ,  Vijay Narayanan

IPC分类号： H01L21/3205 ,  H01L29/66 ,  H01L21/28 ,  H01L21/324 ,  H01L29/423 ,  H01L21/321 ,  H01L21/02

CPC分类号： H01L29/66545 ,  H01L21/02532 ,  H01L21/02592 ,  H01L21/02595 ,  H01L21/28017 ,  H01L21/28088 ,  H01L21/32055 ,  H01L21/321 ,  H01L21/324 ,  H01L29/4232 ,  H01L29/66 ,  H01L29/66795 ,  H01L29/6681

摘要： A method of fabricating a replacement gate stack for a semiconductor device includes the following steps after removal of a dummy gate: growing a high-k dielectric layer over the area vacated by the dummy gate; depositing a thin metal layer over the high-k dielectric layer; depositing a sacrificial layer over the thin metal layer; performing a first rapid thermal anneal; removing the sacrificial layer; and depositing a metal layer of low resistivity metal for gap fill.

公开(公告)号：US20150243762A1

公开(公告)日：2015-08-27

申请号：US14699843

申请日：2015-04-29

申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION ,  GLOBALFOUNDRIES Inc.

发明人： Takashi Ando ,  Eduard A. Cartier ,  Kisik Choi ,  Vijay Narayanan

IPC分类号： H01L29/66 ,  H01L21/321 ,  H01L21/28

CPC分类号： H01L29/66545 ,  H01L21/02532 ,  H01L21/02592 ,  H01L21/02595 ,  H01L21/28017 ,  H01L21/28088 ,  H01L21/32055 ,  H01L21/321 ,  H01L21/324 ,  H01L29/4232 ,  H01L29/66 ,  H01L29/66795 ,  H01L29/6681

摘要： A method of fabricating a replacement gate stack for a semiconductor device includes the following steps after removal of a dummy gate: growing a high-k dielectric layer over the area vacated by the dummy gate; depositing a thin metal layer over the high-k dielectric layer; depositing a sacrificial layer over the thin metal layer; performing a first rapid thermal anneal; removing the sacrificial layer; and depositing a metal layer of low resistivity metal for gap fill.

公开(公告)号：US20140162447A1

公开(公告)日：2014-06-12

申请号：US13709250

申请日：2012-12-10

申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION ,  GLOBALFOUNDRIES, INC. ,  RENESAS ELECTRONICS CORPORATION

发明人： Lisa F. Edge ,  Martin M. Frank ,  Balasubramanian S. Haran ,  Atsuro Inada ,  Sivananda K. Kanakasabapathy ,  Andreas Knorr ,  Vijay Narayanan ,  Vamsi K. Paruchuri ,  Soon-cheon Seo

IPC分类号： H01L21/28

CPC分类号： H01L29/66795 ,  H01L29/41791

摘要： A method for fabricating a field effect transistor device includes patterning a fin on substrate, patterning a gate stack over a portion of the fin and a portion of an insulator layer arranged on the substrate, forming a protective barrier over the gate stack, a portion of the fin and a portion of the insulator layer, the protective barrier enveloping the gate stack, depositing a second insulator layer over portions of the fin and the protective barrier, performing a first etching process to selectively remove portions of the second insulator layer to define cavities that expose portions of source and drain regions of the fin without appreciably removing the protective barrier, and depositing a conductive material in the cavities.

摘要翻译： 一种用于制造场效应晶体管器件的方法，包括对衬底上的翅片进行图案化，在栅极堆叠的一部分上构图栅极堆叠，以及布置在衬底上的绝缘体层的一部分，在栅极叠层上形成保护屏障， 所述翅片和所述绝缘体层的一部分，所述保护屏障包围所述栅极堆叠，在所述鳍片和所述保护屏障的部分上沉积第二绝缘体层，执行第一蚀刻工艺以选择性地去除所述第二绝缘体层的部分以限定空腔 其暴露鳍片的源极和漏极区域的部分，而不明显地去除保护屏障，以及在空腔中沉积导电材料。

公开(公告)号：US09484438B2

公开(公告)日：2016-11-01

申请号：US14699427

申请日：2015-04-29

申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION ,  GLOBALFOUNDRIES Inc.

发明人： Takashi Ando ,  Eduard A. Cartier ,  Kisik Choi ,  Vijay Narayanan

IPC分类号： H01L21/3205 ,  H01L29/66 ,  H01L21/324 ,  H01L21/28 ,  H01L21/02

CPC分类号： H01L29/66545 ,  H01L21/02532 ,  H01L21/02592 ,  H01L21/02595 ,  H01L21/28017 ,  H01L21/28088 ,  H01L21/32055 ,  H01L21/321 ,  H01L21/324 ,  H01L29/4232 ,  H01L29/66 ,  H01L29/66795 ,  H01L29/6681

摘要： A method of fabricating a replacement gate stack for a semiconductor device includes the following steps after removal of a dummy gate: growing a high-k dielectric layer over the area vacated by the dummy gate; depositing a thin metal layer over the high-k dielectric layer; depositing a sacrificial layer over the thin metal layer; performing a first rapid thermal anneal; removing the sacrificial layer; and depositing a metal layer of low resistivity metal for gap fill.