Invention Grant
US09589912B1 Integrated circuit structure with crack stop and method of forming same
有权
具有裂纹停止的集成电路结构及其形成方法
- Patent Title: Integrated circuit structure with crack stop and method of forming same
- Patent Title (中): 具有裂纹停止的集成电路结构及其形成方法
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Application No.: US14837737Application Date: 2015-08-27
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Publication No.: US09589912B1Publication Date: 2017-03-07
- Inventor: Jim S. Liang , Atsushi Ogino , Stephen E. Greco , Roger A. Quon
- Applicant: GLOBALFOUNDRIES Inc.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES INC.
- Current Assignee: GLOBALFOUNDRIES INC.
- Current Assignee Address: KY Grand Cayman
- Agency: Hoffman Warnick LLC
- Agent Yuanmin Cai
- Main IPC: H01L23/528
- IPC: H01L23/528 ; H01L21/31 ; H01L23/00 ; H01L23/532 ; H01L21/311 ; H01L21/3205 ; H01L21/3213
Abstract:
A first aspect of the disclosure provides for an integrated circuit structure. The integrated circuit structure may comprise a first metal structure in a first dielectric layer on a substrate in a crack stop area; and a first crack stop structure in a second dielectric layer, the first crack stop structure being over the first metal structure and including: a first metal fill contacting the first metal structure; and an air seam substantially separating the first metal fill and the second dielectric layer.
Public/Granted literature
- US20170062355A1 INTEGRATED CIRCUIT STRUCTURE WITH CRACK STOP AND METHOD OF FORMING SAME Public/Granted day:2017-03-02
Information query
IPC分类:
