公开(公告)号：US09589911B1

公开(公告)日：2017-03-07

申请号：US14837461

申请日：2015-08-27

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Jim S. Liang ,  Atsushi Ogino ,  Roger A. Quon ,  Stephen E. Greco

IPC: H01L21/14 ,  H01L21/784 ,  H01L23/528 ,  H01L23/538 ,  H01L23/00 ,  H01L23/535 ,  H01L23/532 ,  H01L21/768

CPC classification number: H01L23/562 ,  H01L21/76805 ,  H01L21/76843 ,  H01L21/76844 ,  H01L21/76865 ,  H01L23/522 ,  H01L23/53266 ,  H01L23/53295 ,  H01L23/535

Abstract: Embodiments of the present disclosure provide an integrated circuit (IC) structure with a metal crack stop and methods of forming the same. An IC structure according to embodiments of the present disclosure can include an insulator positioned over a substrate; a barrier film positioned over the insulator; an interlayer dielectric positioned over the barrier film; and a metal crack stop positioned over the substrate and laterally adjacent to each of the insulator, the barrier film, and the interlayer dielectric, wherein the metal crack stop includes a sidewall having a first recess therein, and wherein a horizontal interface between the barrier film and the interlayer dielectric intersects the sidewall of the metal crack stop.

Abstract translation: 本公开的实施例提供具有金属裂纹停止的集成电路（IC）结构及其形成方法。 根据本公开的实施例的IC结构可以包括位于衬底上的绝缘体; 位于所述绝缘体上方的阻挡膜; 位于阻挡膜上方的层间电介质; 以及金属裂纹停止件，其位于所述基板上并且横向邻近所述绝缘体，所述阻挡膜和所述层间电介质中的每一个，其中所述金属裂纹停止件包括其中具有第一凹部的侧壁，并且其中所述阻挡膜 并且层间电介质与金属裂纹停止件的侧壁相交。

公开(公告)号：US20170062354A1

公开(公告)日：2017-03-02

申请号：US14837461

申请日：2015-08-27

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Jim S. Liang ,  Atsushi Ogino ,  Roger A. Quon ,  Stephen E. Greco

IPC: H01L23/00 ,  H01L23/532 ,  H01L21/768 ,  H01L23/535

CPC classification number: H01L23/562 ,  H01L21/76805 ,  H01L21/76843 ,  H01L21/76844 ,  H01L21/76865 ,  H01L23/522 ,  H01L23/53266 ,  H01L23/53295 ,  H01L23/535

Abstract: Embodiments of the present disclosure provide an integrated circuit (IC) structure with a metal crack stop and methods of forming the same. An IC structure according to embodiments of the present disclosure can include an insulator positioned over a substrate; a barrier film positioned over the insulator; an interlayer dielectric positioned over the barrier film; and a metal crack stop positioned over the substrate and laterally adjacent to each of the insulator, the barrier film, and the interlayer dielectric, wherein the metal crack stop includes a sidewall having a first recess therein, and wherein a horizontal interface between the barrier film and the interlayer dielectric intersects the sidewall of the metal crack stop.

Abstract translation: 本公开的实施例提供具有金属裂纹停止的集成电路（IC）结构及其形成方法。 根据本公开的实施例的IC结构可以包括位于衬底上的绝缘体; 位于所述绝缘体上方的阻挡膜; 位于阻挡膜上方的层间电介质; 以及金属裂纹停止件，其位于所述基板上并且横向邻近所述绝缘体，所述阻挡膜和所述层间电介质中的每一个，其中所述金属裂纹停止件包括其中具有第一凹部的侧壁，并且其中所述阻挡膜 并且层间电介质与金属裂纹停止件的侧壁相交。

公开(公告)号：US09601513B1

公开(公告)日：2017-03-21

申请号：US14977899

申请日：2015-12-22

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Terence B. Hook ,  Andreas Scholze ,  Lars W. Liebmann ,  Roger A. Quon ,  Andrew H. Simon

IPC: H01L27/12 ,  H01L23/528 ,  H01L21/84 ,  H01L29/06 ,  H01L21/266 ,  H01L21/3115 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/768 ,  H01L23/532

CPC classification number: H01L27/1211 ,  H01L21/266 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/31155 ,  H01L21/743 ,  H01L21/76802 ,  H01L21/76877 ,  H01L21/76895 ,  H01L21/84 ,  H01L21/845 ,  H01L23/528 ,  H01L23/53209 ,  H01L23/53257 ,  H01L23/53271 ,  H01L23/535 ,  H01L29/0649

Abstract: Various embodiments include methods and integrated circuit structures. One method includes masking a structure with a mask to cover at least a portion of the structure under the mask, selectively implanting a material through a semiconductor layer and into a buried insulator layer forming an implant region. The implant region is substantially parallel to and below an upper surface of the structure. The method may also include masking an additional portion of the structure; etching a set of access ports though the semiconductor layer and partially through the insulator layer into the implant region; etching at least one tunnel below the upper surface of the structure in the implant region using the set of access; and depositing a conductor into the at least one tunnel and the set of access ports.

公开(公告)号：US20170062355A1

公开(公告)日：2017-03-02

申请号：US14837737

申请日：2015-08-27

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Jim S. Liang ,  Atsushi Ogino ,  Stephen E. Greco ,  Roger A. Quon

IPC: H01L23/00 ,  H01L21/3213 ,  H01L21/311 ,  H01L21/3205 ,  H01L23/528 ,  H01L23/532

CPC classification number: H01L23/562 ,  H01L21/31144 ,  H01L23/522 ,  H01L23/53209 ,  H01L23/53214 ,  H01L23/53257 ,  H01L23/53295

Abstract: A first aspect of the disclosure provides for an integrated circuit structure. The integrated circuit structure may comprise a first metal structure in a first dielectric layer on a substrate in a crack stop area; and a first crack stop structure in a second dielectric layer, the first crack stop structure being over the first metal structure and including: a first metal fill contacting the first metal structure; and an air seam substantially separating the first metal fill and the second dielectric layer.

Abstract translation: 本公开的第一方面提供一种集成电路结构。 集成电路结构可以包括在裂纹停止区域中的衬底上的第一介电层中的第一金属结构; 以及在第二电介质层中的第一裂纹阻挡结构，所述第一裂纹阻挡结构在所述第一金属结构之上，并且包括：与所述第一金属结构接触的第一金属填充物; 以及基本分离第一金属填充物和第二介电层的气缝。

公开(公告)号：US09589912B1

公开(公告)日：2017-03-07

申请号：US14837737

申请日：2015-08-27

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Jim S. Liang ,  Atsushi Ogino ,  Stephen E. Greco ,  Roger A. Quon

IPC: H01L23/528 ,  H01L21/31 ,  H01L23/00 ,  H01L23/532 ,  H01L21/311 ,  H01L21/3205 ,  H01L21/3213

CPC classification number: H01L23/562 ,  H01L21/31144 ,  H01L23/522 ,  H01L23/53209 ,  H01L23/53214 ,  H01L23/53257 ,  H01L23/53295

Abstract: A first aspect of the disclosure provides for an integrated circuit structure. The integrated circuit structure may comprise a first metal structure in a first dielectric layer on a substrate in a crack stop area; and a first crack stop structure in a second dielectric layer, the first crack stop structure being over the first metal structure and including: a first metal fill contacting the first metal structure; and an air seam substantially separating the first metal fill and the second dielectric layer.

Abstract translation: 本公开的第一方面提供一种集成电路结构。 集成电路结构可以包括在裂纹停止区域中的衬底上的第一介电层中的第一金属结构; 以及在第二电介质层中的第一裂纹阻挡结构，所述第一裂纹阻挡结构在所述第一金属结构之上，并且包括：与所述第一金属结构接触的第一金属填充物; 以及基本分离第一金属填充物和第二介电层的气缝。