Invention Grant
- Patent Title: Semiconductor chip
- Patent Title (中): 半导体芯片
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Application No.: US14555735Application Date: 2014-11-28
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Publication No.: US09589914B2Publication Date: 2017-03-07
- Inventor: Herbert Gietler , Robert Pressl
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: INFINEON TECHNOLOGIES AG
- Current Assignee: INFINEON TECHNOLOGIES AG
- Current Assignee Address: DE Neubiberg
- Main IPC: H01L23/58
- IPC: H01L23/58 ; H01L29/06 ; G01R31/26 ; H01L21/66

Abstract:
According to various embodiments, a semiconductor chip may include: a semiconductor body region including a first surface and a second surface opposite the first surface; a capacitive structure for detecting crack propagation into the semiconductor body region; wherein the capacitive structure may include a first electrode region at least partially surrounding the semiconductor body region and at least substantially extending from the first surface to the second surface; wherein the capacitive structure further may include a second electrode region disposed next to the first electrode region and an electrically insulating region extending between the first electrode region and the second electrode region.
Public/Granted literature
- US20160155712A1 SEMICONDUCTOR CHIP Public/Granted day:2016-06-02
Information query
IPC分类: