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    SEMICONDUCTOR CHIP
    2.
    发明申请
    SEMICONDUCTOR CHIP 有权
    半导体芯片

    公开(公告)号：US20160155712A1

    公开(公告)日：2016-06-02

    申请号：US14555735

    申请日：2014-11-28

    Applicant: Infineon Technologies AG

    Inventor： Herbert Gietler ,  Robert Pressl

    IPC: H01L23/58 ,  H01L29/06 ,  G01R31/26 ,  H01L23/522

    CPC classification number: H01L22/34 ,  G01N27/24 ,  G01R31/2601 ,  G01R31/2831 ,  H01L23/58 ,  H01L23/642 ,  H01L29/0649 ,  H01L29/0684 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: According to various embodiments, a semiconductor chip may include: a semiconductor body region including a first surface and a second surface opposite the first surface; a capacitive structure for detecting crack propagation into the semiconductor body region; wherein the capacitive structure may include a first electrode region at least partially surrounding the semiconductor body region and at least substantially extending from the first surface to the second surface; wherein the capacitive structure further may include a second electrode region disposed next to the first electrode region and an electrically insulating region extending between the first electrode region and the second electrode region.

    Abstract translation: 根据各种实施例，半导体芯片可以包括：半导体主体区域，包括第一表面和与第一表面相对的第二表面; 用于检测裂纹传播到半导体本体区域中的电容结构; 其中所述电容结构可以包括至少部分地围绕所述半导体本体区域并且至少基本上从所述第一表面延伸到所述第二表面的第一电极区域; 其中所述电容结构还可包括邻近所述第一电极区设置的第二电极区和在所述第一电极区和所述第二电极区之间延伸的电绝缘区。

    Semiconductor chip
    3.
    发明授权
    Semiconductor chip 有权
    半导体芯片

    公开(公告)号：US09589914B2

    公开(公告)日：2017-03-07

    申请号：US14555735

    申请日：2014-11-28

    Applicant: Infineon Technologies AG

    Inventor： Herbert Gietler ,  Robert Pressl

    IPC: H01L23/58 ,  H01L29/06 ,  G01R31/26 ,  H01L21/66

    CPC classification number: H01L22/34 ,  G01N27/24 ,  G01R31/2601 ,  G01R31/2831 ,  H01L23/58 ,  H01L23/642 ,  H01L29/0649 ,  H01L29/0684 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: According to various embodiments, a semiconductor chip may include: a semiconductor body region including a first surface and a second surface opposite the first surface; a capacitive structure for detecting crack propagation into the semiconductor body region; wherein the capacitive structure may include a first electrode region at least partially surrounding the semiconductor body region and at least substantially extending from the first surface to the second surface; wherein the capacitive structure further may include a second electrode region disposed next to the first electrode region and an electrically insulating region extending between the first electrode region and the second electrode region.

    Abstract translation: 根据各种实施例，半导体芯片可以包括：半导体主体区域，包括第一表面和与第一表面相对的第二表面; 用于检测裂纹传播到半导体本体区域中的电容结构; 其中所述电容结构可以包括至少部分地围绕所述半导体本体区域并且至少基本上从所述第一表面延伸到所述第二表面的第一电极区域; 其中所述电容结构还可包括邻近所述第一电极区设置的第二电极区和在所述第一电极区和所述第二电极区之间延伸的电绝缘区。

    Semiconductor chip
    4.
    发明授权
    Semiconductor chip 有权

    公开(公告)号：US10522432B2

    公开(公告)日：2019-12-31

    申请号：US15413442

    申请日：2017-01-24

    Applicant: Infineon Technologies AG

    Inventor： Herbert Gietler ,  Robert Pressl

    IPC: H01L23/58 ,  H01L21/66 ,  H01L29/06 ,  G01R31/26 ,  G01N27/24 ,  G01R31/28 ,  H01L23/64 ,  H01L21/78

    Abstract: According to various embodiments, a semiconductor chip may include: a semiconductor body region including a first surface and a second surface opposite the first surface; a capacitive structure for detecting crack propagation into the semiconductor body region; wherein the capacitive structure may include a first electrode region at least partially surrounding the semiconductor body region and at least substantially extending from the first surface to the second surface; wherein the capacitive structure further may include a second electrode region disposed next to the first electrode region and an electrically insulating region extending between the first electrode region and the second electrode region.

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