发明授权
- 专利标题: Method of manufacturing semiconductor device
- 专利标题(中): 制造半导体器件的方法
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申请号: US14931772申请日: 2015-11-03
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公开(公告)号: US09589926B2公开(公告)日: 2017-03-07
- 发明人: Shoji Sakaguchi
- 申请人: Fuji Electric Co., Ltd.
- 申请人地址: JP Kanagawa
- 专利权人: FUJI ELECTRIC CO., LTD.
- 当前专利权人: FUJI ELECTRIC CO., LTD.
- 当前专利权人地址: JP Kanagawa
- 代理机构: Chen Yoshimura LLP
- 优先权: JP2014-254931 20141217
- 主分类号: B23K26/00
- IPC分类号: B23K26/00 ; H01L23/00 ; H01L25/065 ; H01L25/00
摘要:
A method of manufacturing a semiconductor device that includes: preparing a pair of substrates that respectively include a device structure on one primary surface or another primary surface thereof; stacking the substrates so that said one primary surfaces face each other, exposing said another surfaces to the outside, and fixing entire peripheral outer edges of the substrates that have been stacked to each other; and thereafter, plating said exposed another primary surfaces of the stacked and fixed substrates.
公开/授权文献
- US20160181224A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 公开/授权日:2016-06-23
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