Invention Grant
US09589954B2 Semiconductor device having recess filled with insulating material provided between source/drain impurity region and gate insulator
有权
具有设置在源极/漏极杂质区域和栅极绝缘体之间的由绝缘材料填充的凹部的半导体器件
- Patent Title: Semiconductor device having recess filled with insulating material provided between source/drain impurity region and gate insulator
- Patent Title (中): 具有设置在源极/漏极杂质区域和栅极绝缘体之间的由绝缘材料填充的凹部的半导体器件
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Application No.: US14818516Application Date: 2015-08-05
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Publication No.: US09589954B2Publication Date: 2017-03-07
- Inventor: Akira Mitsuiki , Tomoo Nakayama , Shigeaki Shimizu , Hiroyuki Okuaki
- Applicant: Renesas Electronics Corporation
- Applicant Address: JP Tokyo
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Tokyo
- Agency: Sughrue Mion, PLLC
- Priority: JP2014-168213 20140821
- Main IPC: H01L27/088
- IPC: H01L27/088 ; H01L29/78 ; H01L21/762 ; H01L21/32 ; H01L21/311 ; H01L29/417 ; H01L29/423 ; H01L29/06 ; H01L21/8234
Abstract:
Electric-field concentration in the vicinity of a recess is suppressed. A gate insulating film is provided on a substrate that has a drain region and a first recess therein. The first recess is located between the gate insulating film and the drain region, and is filled with an insulating film. The insulating film has a second recess on its side close to the gate insulating film. An angle defined by an inner side face of the first recess and the surface of the substrate is rounded on a side of the drain region close to the gate insulating film.
Public/Granted literature
- US20160056233A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICE Public/Granted day:2016-02-25
Information query
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