Semiconductor devices and manufacturing methods of the same are disclosed. The semiconductor device includes a die, a conductive structure, a bonding pad and a passivation layer. The conductive structure is over and electrically connected to the die. The bonding pad is over and electrically connected to the conductive structure. The passivation layer is over the bonding pad, wherein the passivation layer includes a nitride-based layer with a refractive index of about 2.16 to 2.18.