公开(公告)号：US20170141228A1

公开(公告)日：2017-05-18

申请号：US14941669

申请日：2015-11-16

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Austin Hsu ,  Ching Yu ,  Ernest Chiu

IPC: H01L29/78 ,  H01L29/165 ,  H01L29/66

CPC classification number: H01L29/7848 ,  H01L21/76224 ,  H01L21/823425 ,  H01L21/823475 ,  H01L21/823481 ,  H01L21/823814 ,  H01L21/823864 ,  H01L21/823878 ,  H01L27/0705 ,  H01L27/088 ,  H01L29/0847 ,  H01L29/165 ,  H01L29/41766 ,  H01L29/41783 ,  H01L29/4232 ,  H01L29/66575 ,  H01L29/66628 ,  H01L29/66636 ,  H01L29/7845 ,  H01L29/7846

Abstract: A field effect transistor comprising a substrate, at least one gate structure, spacers and strained source and drain regions is described. The at least one gate structure is disposed on the substrate and between the recesses and the isolation structures. The spacers are disposed on sidewalls of the at least one gate structure. The strained source and drain regions are disposed in the recesses and on two opposite sides of the at least one gate structure, and top edges of the strained source and drain regions are covered by the spacers and located beneath the spacers.

公开(公告)号：US09589969B1

公开(公告)日：2017-03-07

申请号：US14996233

申请日：2016-01-15

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yu-Wei Chang ,  Austin Hsu ,  Kung-Wei Lee ,  Chui-Ya Peng

IPC: H01L29/788 ,  H01L27/112 ,  H01L21/48 ,  H01L23/525

CPC classification number: H01L21/485 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/568 ,  H01L23/291 ,  H01L23/3171 ,  H01L23/49816 ,  H01L23/49822 ,  H01L23/49894 ,  H01L23/5389 ,  H01L24/19 ,  H01L25/105 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73267 ,  H01L2224/92244 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2924/00014

Abstract: Semiconductor devices and manufacturing methods of the same are disclosed. The semiconductor device includes a die, a conductive structure, a bonding pad and a passivation layer. The conductive structure is over and electrically connected to the die. The bonding pad is over and electrically connected to the conductive structure. The passivation layer is over the bonding pad, wherein the passivation layer includes a nitride-based layer with a refractive index of about 2.16 to 2.18.

Abstract translation: 公开了半导体器件及其制造方法。 半导体器件包括管芯，导电结构，焊盘和钝化层。 导电结构与模具完全电连接。 接合焊盘在导电结构上方电连接。 钝化层在焊盘上方，其中钝化层包括折射率为约2.16至2.18的基于氮化物的层。