Invention Grant
- Patent Title: Buffer stack for group IIIA-N devices
- Patent Title (中): 组IIIA-N设备的缓冲堆栈
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Application No.: US15090689Application Date: 2016-04-05
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Publication No.: US09590086B2Publication Date: 2017-03-07
- Inventor: Qhalid Fareed , Asad Mahmood Haider
- Applicant: Texas Instruments Incorporated
- Applicant Address: US TX Dallas
- Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee Address: US TX Dallas
- Agent Jacqueline J. Garner; Charles A. Brill; Frank D. Cimino
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L29/778 ; H01L21/02 ; H01L29/66 ; H01L29/20 ; H01L29/78 ; H01L29/15 ; H01L29/51 ; H01L29/10

Abstract:
A method of fabricating a multi-layer epitaxial buffer layer stack for transistors includes depositing a buffer stack on a substrate. A first voided Group IIIA-N layer is deposited on the substrate, and a first essentially void-free Group IIIA-N layer is then deposited on the first voided Group IIIA-N layer. A first high roughness Group IIIA-N layer is deposited on the first essentially void-free Group IIIA-N layer, and a first essentially smooth Group IIIA-N layer is deposited on the first high roughness Group IIIA-N layer. At least one Group IIIA-N surface layer is then deposited on the first essentially smooth Group IIIA-N layer.
Public/Granted literature
- US20160218202A1 BUFFER STACK FOR GROUP IIIA-N DEVICES Public/Granted day:2016-07-28
Information query
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