Invention Grant
- Patent Title: Light-emitting diode
- Patent Title (中): 发光二极管
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Application No.: US14940123Application Date: 2015-11-12
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Publication No.: US09590137B2Publication Date: 2017-03-07
- Inventor: Li-Yi Chen , Pei-Yu Chang , Chih-Hui Chan , Chun-Yi Chang , Shih-Chyn Lin , Hsin-Wei Lee
- Applicant: MIKRO MESA TECHNOLOGY CO., LTD.
- Applicant Address: WS Apia
- Assignee: MIKRO MESA TECHNOLOGY CO., LTD.
- Current Assignee: MIKRO MESA TECHNOLOGY CO., LTD.
- Current Assignee Address: WS Apia
- Agency: CKC & Partners Co., Ltd.
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L33/00 ; H01L33/38 ; H01L33/14 ; H01L33/44 ; H01L23/00 ; H01L25/075

Abstract:
A light-emitting diode (LED) includes a first type semiconductor layer, a second type semiconductor layer, a current controlling structure, a first electrode, and a second electrode. The second type semiconductor layer is joined with the first type semiconductor layer. The current controlling structure is joined with the first type semiconductor layer, and the current controlling structure has at least one current-injecting zone therein. The first electrode is electrically coupled with the first type semiconductor layer through the current-injecting zone of the current controlling structure. The second electrode is electrically coupled with the second type semiconductor layer.
Public/Granted literature
- US20160072012A1 LIGHT-EMITTING DIODE Public/Granted day:2016-03-10
Information query
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