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12 条记录 (耗时 0.015 秒)

    Method for transferring device
    1.
    发明授权
    Method for transferring device 有权

    公开(公告)号：US10236195B1

    公开(公告)日：2019-03-19

    申请号：US15847942

    申请日：2017-12-20

    申请人： MIKRO MESA TECHNOLOGY CO., LTD.

    发明人： Li-Yi Chen ,  Shih-Chyn Lin

    IPC分类号： H01L21/67 ,  H01L21/683 ,  H01L21/78 ,  H01L25/075

    摘要： A method for transferring a device includes the following steps: forming a pliable adhesive layer on a carrier substrate; placing the device over the pliable adhesive layer; contacting a transfer head assembly with the device, in which a pliable dielectric layer of the transfer head assembly is in contact with the device during the contacting and more pliable than the device, such that the pliable dielectric layer of the transfer head assembly deforms during the contacting, and the pliable adhesive layer is more pliable than the device, such that the pliable adhesive layer deforms during the contacting; actuating the transfer head assembly to create a grip force; picking up the device by the grip force created by the transfer head assembly; and placing the device onto a receiving substrate.

    Light-emitting diode
    5.
    发明授权
    Light-emitting diode 有权
    发光二极管

    公开(公告)号：US09385267B2

    公开(公告)日：2016-07-05

    申请号：US14874467

    申请日：2015-10-04

    申请人： MIKRO MESA TECHNOLOGY CO., LTD.

    发明人： Li-Yi Chen ,  Pei-Yu Chang ,  Chih-Hui Chan ,  Chun-Yi Chang ,  Shih-Chyn Lin ,  Hsin-Wei Lee

    IPC分类号： H01L33/00 ,  H01L33/60 ,  H01L33/44 ,  H01L33/14 ,  H01L33/02 ,  H01L33/38 ,  H01L21/02 ,  H01L33/46

    CPC分类号： H01L33/0079 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02642 ,  H01L21/02647 ,  H01L33/025 ,  H01L33/145 ,  H01L33/38 ,  H01L33/44 ,  H01L33/46

    摘要： A light-emitting diode (LED) includes a first type semiconductor layer, a second type semiconductor layer, a first current controlling structure, and a first electrode. The second type semiconductor layer is joined with the first type semiconductor layer. The second type semiconductor layer has a first region and a second region, in which the first region has a first threading dislocation density, the second region has a second threading dislocation density, and the first threading dislocation density is greater than the second threading dislocation density. The first current controlling structure is joined with the first type semiconductor layer and has at least one first current-injecting zone therein, in which the vertical projection of the second region on the first current controlling structure at least partially overlaps with the first current-injecting zone. The first electrode is electrically coupled with the first type semiconductor layer.

    摘要翻译： 发光二极管（LED）包括第一类型半导体层，第二类型半导体层，第一电流控制结构和第一电极。 第二类型半导体层与第一类型半导体层接合。 第二类型半导体层具有第一区域和第二区域，其中第一区域具有第一穿透位错密度，第二区域具有第二穿透位错密度，并且第一穿透位错密度大于第二穿透位错密度 。 第一电流控制结构与第一类型半导体层接合并且其中具有至少一个第一电流注入区，其中第一电流控制结构上的第二区的垂直投影至少部分地与第一电流注入 区。 第一电极与第一类型半导体层电耦合。

    Micro-light-emitting diode
    6.
    发明授权
    Micro-light-emitting diode 有权
    微型发光二极管

    公开(公告)号：US09231153B2

    公开(公告)日：2016-01-05

    申请号：US14701514

    申请日：2015-04-30

    申请人： MIKRO MESA TECHNOLOGY CO., LTD.

    发明人： Li-Yi Chen ,  Pei-Yu Chang ,  Chih-Hui Chan ,  Chun-Yi Chang ,  Shih-Chyn Lin ,  Hsin-Wei Lee

    IPC分类号： H01L21/00 ,  H01L33/14 ,  H01L33/62 ,  H01L33/40 ,  H01L33/42 ,  H01L33/38

    CPC分类号： H01L33/145 ,  H01L25/0753 ,  H01L33/38 ,  H01L33/44 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A micro-light-emitting diode (micro-LED) includes a first type semiconductor layer, a second type semiconductor, a first current controlling layer, a first electrode, and a second electrode. The second type semiconductor layer and the first current controlling layer are joined with the first type semiconductor layer. The first current controlling layer has at least one opening therein. The first electrode is electrically coupled with the first type semiconductor layer through the opening. The second electrode is electrically coupled with the second type semiconductor layer. At least one of the first electrode and the second electrode has a light-permeable part. A vertical projection of the first current controlling layer on said one of the first electrode and the second electrode overlaps with the light-permeable part. The light-permeable part is transparent or semi-transparent.

    摘要翻译： 微发光二极管（micro-LED）包括第一类型半导体层，第二类型半导体，第一电流控制层，第一电极和第二电极。 第二类型半导体层和第一电流控制层与第一类型半导体层接合。 第一电流控制层在其中具有至少一个开口。 第一电极通过开口与第一类型半导体层电耦合。 第二电极与第二类型半导体层电耦合。 第一电极和第二电极中的至少一个具有透光部分。 第一电流控制层在第一电极和第二电极之一上的垂直投影与透光部重叠。 透光部分是透明或半透明的。

    Transfer head array
    7.
    发明授权
    Transfer head array 有权

    公开(公告)号：US10179731B2

    公开(公告)日：2019-01-15

    申请号：US14828515

    申请日：2015-08-17

    申请人： MIKRO MESA TECHNOLOGY CO., LTD.

    发明人： Li-Yi Chen ,  Shih-Chyn Lin ,  Hsin-Wei Lee ,  Pei-Yu Chang

    IPC分类号： H02N13/00 ,  B81C99/00

    摘要： A transfer head array includes a base substrate, an interlayer isolation layer, plural transfer heads, and at least one shielding layer. The interlayer isolation layer is disposed on the base substrate, and the interlayer isolation layer has a flat top surface facing away from the base substrate. The transfer heads are arranged on the interlayer isolation layer. The shielding layer is disposed in the interlayer isolation layer.

    Method for transferring semiconductor structure
    8.
    发明授权
    Method for transferring semiconductor structure 有权

    公开(公告)号：US09997399B2

    公开(公告)日：2018-06-12

    申请号：US15599482

    申请日：2017-05-19

    申请人： MIKRO MESA TECHNOLOGY CO., LTD.

    发明人： Shih-Chyn Lin ,  Li-Yi Chen

    IPC分类号： H01L21/00 ,  H01L21/768 ,  H01L21/30 ,  H01L21/02

    CPC分类号： H01L21/768 ,  H01L21/02068 ,  H01L21/02104 ,  H01L21/30 ,  H01L33/0079 ,  H01L33/0095 ,  H01L2224/80006

    摘要： A method for transferring a semiconductor structure is provided. The method includes: coating an adhesive layer onto a carrier substrate; disposing the semiconductor structure onto the adhesive layer, in which the adhesive layer includes an adhesive component and an surfactant component after the disposing, the semiconductor structure includes a body and a bottom electrode, and the bottom electrode is disposed between the body and the adhesive layer after the disposing; irradiating a first electromagnetic wave to the adhesive layer to reduce adhesion pressure of the adhesive layer to the semiconductor structure while the semiconductor structure remains on the adhesive layer, in which the carrier substrate, the semiconductor structure, and the bottom electrode have a pass band in between ultraviolet to infrared; and transferring the semiconductor structure from the adhesive layer to a receiving substrate after the adhesion pressure of the adhesive layer is reduced.

    Micro-light emitting diode (micro-LED) device
    10.
    发明授权
    Micro-light emitting diode (micro-LED) device 有权

    公开(公告)号：US10297719B2

    公开(公告)日：2019-05-21

    申请号：US14836976

    申请日：2015-08-27

    申请人： MIKRO MESA TECHNOLOGY CO., LTD.

    发明人： Li-Yi Chen ,  Shih-Chyn Lin ,  Hsin-Wei Lee ,  Pei-Yu Chang

    IPC分类号： H01L33/00 ,  H01L33/40 ,  H01L33/14

    摘要： A micro-light emitting diode (micro-LED) device includes a receiving substrate and a micro-LED. The micro-LED includes a first type semiconductor layer, a second type semiconductor layer, a current controlling layer, at least one reflective layer, and at least one first electrode. The second type semiconductor layer is joined with the first type semiconductor layer. The current controlling layer is joined with one of the first type semiconductor layer and the second type semiconductor layer, the current controlling layer having at least one opening therein. The reflective layer electrically is coupled with the first type semiconductor layer. The first electrode is disposed on a surface of the reflective layer facing the receiving substrate. The first electrode forms an adhesive bonding system with the receiving substrate.