Invention Grant
- Patent Title: Particle generation suppressor by DC bias modulation
- Patent Title (中): 直流偏置调制的粒子发生抑制器
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Application No.: US14514930Application Date: 2014-10-15
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Publication No.: US09593421B2Publication Date: 2017-03-14
- Inventor: Jonghoon Baek , Soonam Park , Xinglong Chen , Dmitry Lubomirsky
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: APPLIED MATERIALS, INC.
- Current Assignee: APPLIED MATERIALS, INC.
- Current Assignee Address: US CA Santa Clara
- Agency: Patterson + Sheridan, LLP
- Main IPC: C23C16/50
- IPC: C23C16/50 ; H05H1/24 ; C23C16/52 ; C23C16/503 ; C23C16/509 ; C23C16/44 ; H01J37/32
Abstract:
Methods for reducing particle generation in a processing chamber are disclosed. The methods generally include generating a plasma between a powered top electrode and a grounded bottom electrode, wherein the top electrode is parallel to the bottom electrode, and applying a constant zero DC bias voltage to the powered top electrode during a film deposition process to minimize the electrical potential difference between the powered top electrode and the plasma and/or the electrical potential difference between the grounded bottom electrode and the plasma.
Public/Granted literature
- US20150123541A1 PARTICLE GENERATION SUPPRESSPR BY DC BIAS MODULATION Public/Granted day:2015-05-07
Information query
IPC分类:
