Invention Grant
US09594673B2 Driving method of memory controller and nonvolatile memory device controlled by memory controller
有权
由存储器控制器控制的存储器控制器和非易失性存储器件的驱动方法
- Patent Title: Driving method of memory controller and nonvolatile memory device controlled by memory controller
- Patent Title (中): 由存储器控制器控制的存储器控制器和非易失性存储器件的驱动方法
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Application No.: US14523978Application Date: 2014-10-27
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Publication No.: US09594673B2Publication Date: 2017-03-14
- Inventor: Kyungryun Kim , Seokjun Ham
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Volentine & Whitt, PLLC
- Priority: KR10-2013-0137833 20131113
- Main IPC: G06F12/02
- IPC: G06F12/02 ; G06F11/10 ; G11C29/52 ; G11C29/44
Abstract:
A method is for driving a memory controller which is configured to control a nonvolatile memory device. The method includes counting a number of error bits of read data provided from the nonvolatile memory device, determining a running average value using the number of error bits; and performing a wear leveling on the nonvolatile memory device using the running average value as a wear leveling index.
Public/Granted literature
- US20150135025A1 DRIVING METHOD OF MEMORY CONTROLLER AND NONVOLATILE MEMORY DEVICE CONTROLLED BY MEMORY CONTROLLER Public/Granted day:2015-05-14
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