Method for cleaning plasma processing chamber and substrate

Invention Grant

US09595448B2 Method for cleaning plasma processing chamber and substrate 有权

Title translation: 清洗等离子体处理室和基板的方法

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Patent Title: Method for cleaning plasma processing chamber and substrate
Patent Title (中): 清洗等离子体处理室和基板的方法
Application No.: US14753735

Application Date: 2015-06-29
Publication No.: US09595448B2

Publication Date: 2017-03-14
Inventor: Shih-Ping Hong , Yu-Cheng Liu
Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD
Applicant Address: TW Hsinchu
Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
Current Assignee Address: TW Hsinchu
Agency: Birch, Stewart, Kolasch & Birch, LLP
Main IPC: H01L21/3065
IPC: H01L21/3065 ; H01L21/02 ; H01L21/32 ; B08B9/08 ; B08B7/00 ; H01L21/67 ; C23C16/44

Method for cleaning plasma processing chamber and substrate

Abstract:

A method for cleaning a plasma processing chamber is provided. The method includes introducing an organic gas into a plasma processing chamber. The organic gas includes an organic compound including carbon and hydrogen. The method includes generating an organic plasma by exciting the organic gas. The organic plasma reacts with metal compound residues over an interior surface of the plasma processing chamber to volatilize the metal compound residues into a gaseous metal compound. The method includes removing the gaseous metal compound from the plasma processing chamber.

Abstract(Chinese):

提供了一种用于清洁等离子体处理室的方法。该方法包括将有机气体引入等离子体处理室。有机气体包括碳和氢的有机化合物。该方法包括通过激发有机气体产生有机等离子体。有机血浆与等离子体处理室的内表面上的金属化合物残留物反应，使金属化合物残留物挥发成气态金属化合物。该方法包括从等离子体处理室中除去气态金属化合物。

Public/Granted literature

US20160379833A1 METHOD FOR CLEANING PLASMA PROCESSING CHAMBER AND SUBSTRATE Public/Granted day:2016-12-29

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/30	....用H01L21/20至H01L21/26各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/28）
H01L21/302	.....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割
H01L21/306	......化学或电处理，例如电解腐蚀（形成绝缘层的入H01L21/31；绝缘层的后处理入H01L21/3105）
H01L21/3065	.......等离子腐蚀；活性离子腐蚀