Invention Grant
US09595480B2 Method of forming a BICMOS semiconductor chip that increases the betas of the bipolar transistors
有权
形成增加双极晶体管的β的BICMOS半导体芯片的方法
- Patent Title: Method of forming a BICMOS semiconductor chip that increases the betas of the bipolar transistors
- Patent Title (中): 形成增加双极晶体管的β的BICMOS半导体芯片的方法
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Application No.: US14561008Application Date: 2014-12-04
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Publication No.: US09595480B2Publication Date: 2017-03-14
- Inventor: Natalia Lavrovskaya , Alexei Sadovnikov , Andrew D. Strachan
- Applicant: Texas Instruments Incorporated
- Applicant Address: US TX Dallas
- Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee Address: US TX Dallas
- Agent Tuenlap D. Chan; Charles A. Brill; Frank D. Cimino
- Main IPC: H01L21/337
- IPC: H01L21/337 ; H01L21/8249 ; H01L29/66 ; H01L29/10 ; H01L29/08 ; H01L27/06 ; H01L21/8238
Abstract:
The betas of the bipolar transistors in a BiCMOS semiconductor structure are increased by forming the emitters of the bipolar transistors with two implants: a source-drain implant that forms a first emitter region at the same time that the source and drain regions are formed, and an additional implant that forms a second emitter region at the same time that another region is formed. The additional implant has an implant energy that is greater than the implant energy of the source-drain implant.
Public/Granted literature
- US20160163598A1 METHOD OF FORMING A BICMOS SEMICONDUCTOR CHIP THAT INCREASES THE BETAS OF THE BIPOLAR TRANSISTORS Public/Granted day:2016-06-09
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