Invention Grant
- Patent Title: Fin-type metal-semiconductor resistors and fabrication methods thereof
- Patent Title (中): 鳍型金属半导体电阻及其制造方法
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Application No.: US14969449Application Date: 2015-12-15
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Publication No.: US09595518B1Publication Date: 2017-03-14
- Inventor: Anthony I-Chih Chou , Chengwen Pei , Edward P. Maciejewski , Ning Zhan
- Applicant: GLOBALFOUNDRIES INC.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES INC.
- Current Assignee: GLOBALFOUNDRIES INC.
- Current Assignee Address: KY Grand Cayman
- Agency: Scully Scott Murphy and Presser
- Agent Frank Digiglio
- Main IPC: H01L27/06
- IPC: H01L27/06 ; H01L21/8234 ; H01L21/265 ; H01L49/02 ; H01L29/08 ; H01L29/45 ; H01L29/78

Abstract:
Fabrication methods and structure include: providing a wafer with at least one fin extended above a substrate in a first region, and at least one fin extended above the substrate in a second region of the wafer; forming a gate structure extending at least partially over the at least one fin to define a semiconductor device region in the first region; implanting a dopant into the at least one fin in the first region and into the at least one fin in the second region of the wafer, where the implanting of the dopant into the at least one fin of the second region modulates a physical property of the at least one fin to define a resistor device region in the second region; and disposing a conductive material at least partially over the at least one fin in the first region and over the at least one fin in the second region of the wafer, in part, to form a source and drain contact in the first region, and a fin-type metal-semiconductor resistor in the second region.
Information query
IPC分类: