Invention Grant
US09595548B2 Method of manufacturing thin film transistor substrate having etched trenches with color filter material disposed therein
有权
制造具有设置在其中的滤色器材料的具有蚀刻沟槽的薄膜晶体管基板的方法
- Patent Title: Method of manufacturing thin film transistor substrate having etched trenches with color filter material disposed therein
- Patent Title (中): 制造具有设置在其中的滤色器材料的具有蚀刻沟槽的薄膜晶体管基板的方法
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Application No.: US14340195Application Date: 2014-07-24
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Publication No.: US09595548B2Publication Date: 2017-03-14
- Inventor: Se-Hwan Yu , Byoung-Joo Kim , Hyang-Shik Kong , Kweon-Sam Hong , Yoon-Ho Kang , Young-Joo Choi
- Applicant: SAMSUNG DISPLAY CO., LTD.
- Applicant Address: KR Yongin, Gyeonggi-do
- Assignee: SAMSUNG DISPLAY CO., LTD.
- Current Assignee: SAMSUNG DISPLAY CO., LTD.
- Current Assignee Address: KR Yongin, Gyeonggi-do
- Agency: F. Chau & Associates, LLC
- Priority: KR10-2008-0009210 20080129
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/84 ; H01L27/12 ; B29D11/00 ; G02F1/1335 ; H01L33/42 ; H01L33/58 ; H01L21/311
Abstract:
A method of manufacturing a color filter substrate includes forming a plurality of trenches having a predetermined depth by etching a surface of a transparent substrate, disposing a color filter material in the plurality of trenches to form a color filter layer, and forming a transparent electrode on the transparent substrate including the color filter layer therein.
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