Invention Grant
- Patent Title: Semiconductor device including power storage elements and switches
- Patent Title (中): 包括蓄电元件和开关的半导体装置
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Application No.: US14814609Application Date: 2015-07-31
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Publication No.: US09595955B2Publication Date: 2017-03-14
- Inventor: Yoshiyuki Kurokawa , Yuki Okamoto
- Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- Applicant Address: JP Kanagawa-ken
- Assignee: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- Current Assignee: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- Current Assignee Address: JP Kanagawa-ken
- Agency: Nixon Peabody LLP
- Agent Jeffrey L. Costellia
- Priority: JP2014-162900 20140808
- Main IPC: G11C5/14
- IPC: G11C5/14 ; H03K17/687 ; H03L7/099 ; H03K3/03 ; H03L7/093

Abstract:
To generate an analog current without restriction by a power supply voltage. A semiconductor device includes a first node, a second node, a first- to an n-th-stage power storage element (n is an integer greater than or equal to 2), and a first- to an n-th-stage switch. The capacities of the first- to the n-th-stage power storage element are different from one another. The first- to the n-th-stage power storage element are electrically connected in parallel between the first node and the second node. A first terminal of a k-th stage power storage element (k is an integer greater than or equal to 1 and less than or equal to n) is electrically connected to the first input node via a k-th stage switch. The on/off states of the first- to the n-th-stage switch are controlled by a first to an n-th signal.
Public/Granted literature
- US20160043715A1 SEMICONDUCTOR DEVICE Public/Granted day:2016-02-11
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