Invention Grant
- Patent Title: Genetically engineered and stress resistant yeast cell with enhanced MSN2 activity and method of producing lactate using the same
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Application No.: US14811520Application Date: 2015-07-28
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Publication No.: US09598709B2Publication Date: 2017-03-21
- Inventor: Sungsoo Kim , Sunghaeng Lee , Dongsik Yang , Huisub Lim , Kwangmyung Cho
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: Leydig, Volt & Mayer, Ltd.
- Priority: KR10-2014-0096013 20140728
- Main IPC: C12N1/20
- IPC: C12N1/20 ; C12P7/56 ; C12N15/00 ; C12Q1/68 ; C07H21/04 ; C12N9/04 ; C12N9/06 ; C12N9/08 ; C07K1/00 ; C12N9/02 ; C07K14/395
Abstract:
Provided is a yeast cell having a stress tolerance, wherein the yeast cell has enhanced MSN2 activity, a method of producing the yeast cell, and a method of producing lactate by using the same.
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