- 专利标题: Storage device and method of writing and reading the same
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申请号: US14297093申请日: 2014-06-05
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公开(公告)号: US09601205B2公开(公告)日: 2017-03-21
- 发明人: Younggeon Yoo , Junjin Kong , Hong Rak Son
- 申请人: Younggeon Yoo , Junjin Kong , Hong Rak Son
- 申请人地址: KR Gyeonggi-Do
- 专利权人: SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人: SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人地址: KR Gyeonggi-Do
- 代理机构: Harness, Dickey & Pierce, P.L.C.
- 优先权: KR10-2013-0076608 20130701
- 主分类号: G06F12/02
- IPC分类号: G06F12/02 ; G11C16/10 ; G06F11/10 ; G11C11/56 ; G11C16/04
摘要:
A write method of a storage device including at least one nonvolatile memory device and a memory controller controlling the nonvolatile memory device includes dividing write data into a plurality of page data groups, each page data group including multiple bits of data; encoding the divided page data groups using different binary codes, respectively; mapping the encoded page data groups; programming, in first memory cells connected to one word line, programming states to which binary values of each of the mapped encoded page data groups are mapped, such that, the plurality of page data groups correspond respectively to a plurality of read voltage levels, and for each of the plurality of page data groups, the page data group can be read by performing a single read operation on the first memory cells using the read voltage level corresponding to the page data group.