Invention Grant
- Patent Title: Thin film transistor and manufacturing method thereof, array substrate and manufacturing method thereof, and display device
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Application No.: US14429279Application Date: 2014-07-31
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Publication No.: US09601338B2Publication Date: 2017-03-21
- Inventor: Xiangyong Kong , Hongda Sun
- Applicant: BOE TECHNOLOGY GROUP CO., LTD.
- Applicant Address: CN Beijing
- Assignee: BOE Technology Group Co., Ltd.
- Current Assignee: BOE Technology Group Co., Ltd.
- Current Assignee Address: CN Beijing
- Agency: Banner & Witcoff, Ltd.
- Priority: CN201410039812 20140127
- International Application: PCT/CN2014/083429 WO 20140731
- International Announcement: WO2015/109811 WO 20150730
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L21/283 ; H01L27/12 ; H01L21/77 ; H01L29/45 ; H01L29/49 ; H01L21/311 ; H01L27/32 ; H01L29/417 ; H01L29/423 ; H01L29/51 ; H01L29/66 ; H01L29/786 ; G02F1/1362
Abstract:
A thin film transistor and a manufacturing method thereof, an array substrate and a manufacturing method thereof, and a display device are provided. The array substrate comprises: a base substrate and an electrode arranged on the base substrate. The electrode comprises: an aluminum layer or an aluminum alloy layer on the base substrate; and a first barrier layer arranged on the aluminum layer or the aluminum alloy layer and configured for preventing the aluminum layer or the aluminum alloy layer from producing hillocks. The array substrate can eliminate bad phenomenon that the metal aluminum or aluminum alloy formed on the base substrate produces hillocks when subjected to high temperature.
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