Invention Grant
- Patent Title: Ultra fast semiconductor laser
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Application No.: US14653525Application Date: 2014-10-17
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Publication No.: US09601895B2Publication Date: 2017-03-21
- Inventor: Idan Mandelbaum , Konstantinos Papadopoulos
- Applicant: BAE Systems Information and Electronic Systems Integration Inc.
- Applicant Address: US NH Nashua
- Assignee: BAE Systems Information and Electronic Systems Integration Inc.
- Current Assignee: BAE Systems Information and Electronic Systems Integration Inc.
- Current Assignee Address: US NH Nashua
- Agency: Sand & Sebolt, LPA
- Agent Daniel J. Long
- International Application: PCT/US2014/061106 WO 20141017
- International Announcement: WO2015/058070 WO 20150423
- Main IPC: H01S3/10
- IPC: H01S3/10 ; H01S3/094 ; H01S5/06 ; H01S3/106 ; H01S5/0625 ; H01S5/125 ; H01S5/34 ; H01S5/02 ; H01S5/12

Abstract:
A laser system includes first and second mirrors, a semiconductor laser and a high frequency pulse generator. The semiconductor laser generates optical power within an optical cavity and reflects the optical power between the first mirror and second mirrors. The optical power has a frequency of foriginal-laser. The high frequency pulse generator generates a high frequency pulse with a rise time greater than an optical cycle of the optical power within the optical cavity and directly impinges the high frequency pulse on the optical power within the optical cavity. Impinging the high frequency pulse on the optical power within the optical cavity causes a frequency shift of the optical power to generate a final laser frequency that is greater than foriginal-laser as well as beyond a frequency band of the second mirror to cause a final laser to be emitted past the second mirror and from the semiconductor laser.
Public/Granted literature
- US20150303651A1 ULTRA FAST SEMICONDUCTOR LASER Public/Granted day:2015-10-22
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