Invention Grant
- Patent Title: Non-volatile memory device having adjustable read voltage, memory system comprising same, and method of operating same
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Application No.: US13947219Application Date: 2013-07-22
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Publication No.: US09606864B2Publication Date: 2017-03-28
- Inventor: Seung-Yeon Lee , Hee-Woong Kang , Jong-Nam Baek , San Song
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: unknown Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: unknown Suwon-si, Gyeonggi-do
- Agency: Volentine & Whitt, PLLC
- Priority: KR10-2012-0111380 20121008
- Main IPC: G11C29/00
- IPC: G11C29/00 ; G06F11/10 ; G11C11/56 ; G11C16/26 ; G11C16/34
Abstract:
A nonvolatile memory device includes a memory cell array including a selected page including multiple error correction code (ECC) units, and a voltage generation unit configured to generate a read voltage to read data from the selected page. Read voltage levels are set individually for the respective ECC units according to data detection results for each of the ECC units. During a read retry section performed with respect to selected ECC units of the selected page for which read errors have been detected, a re-read operation of the selected ECC units is performed according to the respective read voltage levels set for the selected ECC units.
Public/Granted literature
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